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PDF MMSZ52xxET3 Data sheet ( Hoja de datos )
| Número de pieza | MMSZ52xxET3 | |
| Descripción | Zener Voltage Regulators 500 mW SOD-123 Surface Mount | |
| Fabricantes | ON Semiconductor | |
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MMSZ5221ET1 Series
Preferred Device
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
• 500 mW Rating on FR−4 or FR−5 Board
• Wide Zener Reverse Voltage Range − 2.4 V to 110 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• General Purpose, Medium Current
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
www.DataSheet4U.com POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1) Ppk 225 W
@ TL ≤ 25°C
Total Power Dissipation on FR−5 Board,
(Note 3) @ TL = 75°C
Derated above 75°C
PD
500 mW
6.7 mW/°C
Thermal Resistance, (Note 2)
Junction−to−Ambient
RqJA
340 °C/W
Thermal Resistance, (Note 2)
Junction−to−Lead
RqJL
150 °C/W
Junction and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 6
1
http://onsemi.com
1
Cathode
2
Anode
2 SOD−123
CASE 425
1 STYLE 1
MARKING DIAGRAM
1 xxx M G
G
xxx = Device Code (Refer to page 2)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMSZ52xxET1 SOD−123 3000/Tape & Reel
MMSZ52xxET1G SOD−123 3000/Tape & Reel
(Pb−Free)
MMSZ52xxET3 SOD−123 10000/Tape & Reel
MMSZ52xxET3G SOD−123 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Publication Order Number:
MMSZ5221ET1/D
1 page  
MMSZ5221ET1 Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25°C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1 0.00001
1 10 100 0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
+150°C
+ 25°C
− 55°C
10 20 30 40 50 60 70 80
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
90
100 100
TA = 25°C
TA = 25°C
10 10
11
0.1 0.1
0.01
0
2 4 6 8 10
VZ, ZENER VOLTAGE (V)
0.01
12 10
30 50 70
VZ, ZENER VOLTAGE (V)
90
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50 HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20 40
60 80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
http://onsemi.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMSZ52xxET3.PDF ] | |
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| MMSZ52xxET3 | Zener Voltage Regulators 500 mW SOD-123 Surface Mount | ON Semiconductor |
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