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부품번호 | G4PH30KD 기능 |
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기능 | IRG4PH30KD | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
www.DataSheet4U.com
PD- 91579A
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
G
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces IRGPH30MD2 products
• For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
20
10
40
40
10
40
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
2/7/2000
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IRG4PH30KD
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
5.0
VGE = 15V
80 us PULSE WIDTH
4.5
4.0
IC = 20A
3.5
IC = 10A
3.0
IC = 5A
2.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4 www.irf.com
4페이지 IRG4PH30KD
100 100
IF = 20A
IF = 10A
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 5.0A
IF = 20A
IF = 10A
80
IF = 5.0A
60 10
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40
VR = 2 00 V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
800
600
VR = 20 0V
TJ = 125°C
TJ = 25°C
IF = 20A
IF = 10A
I F = 5.0A
1
100 1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
1000
IF = 20A
IF = 10A
IF = 5.0A
VR = 200V
TJ = 125°C
TJ = 25°C
400
100
200
0
100 1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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10
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
G4PH30KD | IRG4PH30KD | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |