(PDF) PESD5V0L6US Datasheet - Low Capacitance 6-fold Esd Protection Diode Array

Número de pieza	PESD5V0L6US
Descripción	Low Capacitance 6-fold Esd Protection Diode Array
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PESD5V0L6US Low capacitance 6-fold ESD protection diode array in SO8 package Product speciﬁcation 2004 Feb 18 1 page Philips Semiconductors Low capacitance 6-fold ESD protection diode array in SO8 package Product speciﬁcation PESD5V0L6US 102 Ppp (W) 10 001aaa192 1.2 Ppp Ppp(25˚C) 0.8 0.4 001aaa193 1 1 10 102 103 104 tp (µs) Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Fig.2. Fig.4 Peak pulse power dissipation as a function www.DataSheet4U.com of pulse time; typical values. 0 0 50 100 150 200 Tj (°C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values. 18 Cd (pF) 16 001aaa194 14 12 10 8 012345 VR (V) 10 IR IR(25˚C) 1 001aaa195 10−1 −100 −50 0 50 100 150 Tj (°C) Tamb = 25 °C; f = 1 MHz. Fig.6 Diode capacitance as a function of reverse voltage; typical values. Fig.7 Relative variation of reverse leakage current as a function of junction temperature; typical values. 2004 Feb 18 5 5 Page

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