(PDF) PESD5V0L7BS Datasheet - Low Capacitance 7-fold Bi-directional Esd Protection Diode Array

Número de pieza	PESD5V0L7BS
Descripción	Low Capacitance 7-fold Bi-directional Esd Protection Diode Array
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PESD5V0L7BS Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package Product speciﬁcation 2004 Mar 15 1 page Philips Semiconductors Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package Product speciﬁcation PESD5V0L7BS 102 Ppp (W) 10 001aaa192 1 1 10 102 103 104 tp (µs) Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Fig.2. Fig.4 Peak pulse power as a function of pulse www.DataSheet4U.com time; typical values. 1.2 Ppp Ppp(25˚C) 0.8 001aaa193 0.4 0 0 50 100 150 200 Tj (°C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values. 9 Cd (pF) 8 7 001aaa142 10 IR IR(25°C) 1 001aaa143 6 012345 VR (V) Tamb = 25 °C; f = 1 MHz. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 0 25 50 75 100 125 150 Tj (°C) Fig.7 Relative variation of reverse leakage current as a function of junction temperature; typical values. 2004 Mar 15 5 5 Page

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