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부품번호 | PESD3V3V4UW 기능 |
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기능 | (PESDxV4UW) Very low capacitance quadruple ESD protection diode arrays | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
in SOT665 package
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in
ultra small SOT665 plastic package designed to protect up to four signal lines from the
damage caused by ESD and other transients.
1.2 Features
s ESD protection of up to four lines
s Very low diode capacitance
s Low clamping voltage
s Ultra low leakage current: IRM = 3 nA
s ESD protection up to 12 kV
s IEC 61000-4-2; level 4 (ESD)
1.3 Applications
s Computers and peripherals
s Audio and video equipment
s Cellular handsets and accessories
s Communication systems
s Portable electronics
s Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1:
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse stand-off voltage
PESD3V3V4UW
PESD5V0V4UW
diode capacitance
PESD3V3V4UW
PESD5V0V4UW
Conditions
f = 1 MHz;
see Figure 5;
VR = 0 V
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 15 18 pF
- 12 15 pF
Philips Semiconductors
PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
VRWM
reverse stand-off voltage
PESD3V3V4UW
- - 3.3
PESD5V0V4UW
- - 5.0
IRM reverse leakage current see Figure 6;
PESD3V3V4UW
VRWM = 3.3 V
PESD5V0V4UW
VRWM = 5.0 V
VBR breakdown voltage IR = 1 mA
PESD3V3V4UW
- 40 300
- 3 25
5.3 5.6 5.9
PESD5V0V4UW
6.4 6.8 7.2
Cd
Vwww.DataSheet4U.com CL
rdif
diode capacitance
PESD3V3V4UW
PESD5V0V4UW
clamping voltage
PESD3V3V4UW
PESD5V0V4UW
differential resistance
PESD3V3V4UW
f = 1 MHz; see Figure 5;
VR = 0 V
VR = 3.3 V
VR = 0 V
VR = 5 V
IPP = 1 A
IPP = 2 A
IPP = 1 A
IPP = 1.7 A
IR = 1 mA
-
-
-
-
[1] [2]
-
-
-
-
-
15 18
9 12
12 15
69
-9
- 11
- 11
- 13
- 200
PESD5V0V4UW
- - 100
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
Unit
V
V
nA
nA
V
V
pF
pF
pF
pF
V
V
V
V
Ω
Ω
9397 750 14481
Product data sheet
Rev. 01 — 22 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 11
4페이지 Philips Semiconductors
8. Test information
PESDxV4UW series
Very low capacitance quadruple ESD protection diode arrays
ESD TESTER
RZ
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
450 Ω
RG 223/U
50 Ω coax
D.U.T.
Device
Under
Test
PESDxV4UW
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
GND
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD3V3V4UW
www.DataSheet4U.com
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
PESD5V0V4UW
GND
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig 8. ESD clamping test set-up and waveforms
vertical scale = 5 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa265
9397 750 14481
Product data sheet
Rev. 01 — 22 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 11
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부품번호 | 상세설명 및 기능 | 제조사 |
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