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What is PESD3V3U1UT?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "(PESDxU1UT) Ultra low capacitance ESD protection diode".


PESD3V3U1UT Datasheet PDF - NXP Semiconductors

Part Number PESD3V3U1UT
Description (PESDxU1UT) Ultra low capacitance ESD protection diode
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 01 — 11 May 2005
Product data sheet
1. Product profile
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1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
s Unidirectional ESD protection of one line
s Ultra low diode capacitance: Cd = 0.6 pF
s Max. peak pulse power: PPP up to 200 W
s Low clamping voltage
s ESD protection > 23 kV
s IEC 61000-4-2; level 4 (ESD)
s IEC 61000-4-5; (surge)
1.3 Applications
s 10/100/1000 Ethernet
s FireWire
s Communication systems
s Local Area Network (LAN) equipment
s Computers and peripherals
s High-speed datalines
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VRWM
reverse stand-off voltage
PESD3V3U1UT
- - 3.3 V
PESD5V0U1UT
- - 5.0 V
PESD12VU1UT
- - 12 V
PESD15VU1UT
- - 15 V
PESD24VU1UT
- - 24 V
Cd diode capacitance
f = 1 MHz; VR = 0 V [1] -
0.6 1.5 pF
[1] Measured from pin 1 to 2

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PESD3V3U1UT equivalent
Philips Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
VRWM
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
IRM reverse leakage current
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
VBR breakdown voltage
PESD3V3U1UT
PESD5V0U1UT
www.DataSheet4U.com
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Cd diode capacitance
VCL clamping voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
rdif differential resistance
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Conditions
VRWM = 3.3 V
VRWM = 5.0 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IR = 5 mA
f = 1 MHz; VR = 0 V
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 3 A
IR = 1 mA
Min
-
-
-
-
-
-
-
-
-
-
[2]
5.8
7.0
14.2
17.1
25.4
[2] -
[1] [2]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
0.25
0.03
<1
<1
<1
6.4
7.6
15.0
18.9
27.8
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
1.5
9
20
12
21
23
39
28
53
40
76
400
80
200
225
300
Unit
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
pF
V
V
V
V
V
V
V
V
V
V
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2
9397 750 14912
Product data sheet
Rev. 01 — 11 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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