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부품번호 | PESD5V0U1BB 기능 |
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기능 | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
PESD5V0U1BA;
PESD5V0U1BB; PESD5V0U1BL
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 25 April 2007
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one data line
from the damage caused by ESD.
Table 1. Product overview
Type number
Package
NXP
PESD5V0U1BA
SOD323
PESD5V0U1BB
SOD523
PESD5V0U1BL
SOD882
JEITA
SC-76
SC-79
-
Package
configuration
very small
flat lead ultra small
leadless ultra small
1.2 Features
I Bidirectional ESD protection of one line I Ultra low leakage current: IRM = 5 nA
I Ultra low diode capacitance: Cd = 2.9 pF I ESD protection of up to 10 kV
I IEC 61000-4-2; level 4 (ESD)
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I 10/100/1000 Ethernet
I Local Area Network (LAN) equipment
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 pF
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
IRM
VBR
Cd
rdif
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
VRWM = 5 V
IR = 5 mA
f = 1 MHz
differential resistance
VR = 0 V
VR = 5 V
IR = 1 mA
Min Typ Max Unit
--
-5
5.5 7
5V
100 nA
9.5 V
- 2.9 3.5 pF
- 1.9 - pF
- - 100 Ω
3.0
Cd
(pF)
2.6
www.DataSheet4U.com
2.2
006aab036
1.8
012345
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
+
006aaa676
Fig 3. V-I characteristics for a bidirectional ESD
protection diode
PESD5V0U1BA_BB_BL_1
Product data sheet
Rev. 01 — 25 April 2007
© NXP B.V. 2007. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
8. Package outline
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
1.35
1.15
1
0.45
0.15
1.1
0.8
2.7 1.8
2.3 1.6
0.85
0.75
1
1.65 1.25
1.55 1.15
0.65
0.58
Dimensions in mm
2
0.40
0.25
0.25
0.10
03-12-17
Dimensions in mm
2
0.34
0.26
0.17
0.11
02-12-13
Fig 6. Package outline SOD323 (SC-76)
Fig 7. Package outline SOD523 (SC-79)
www.DataSheet4U.com
0.30
0.22
0.62
0.55
2
0.30
0.22
1
0.55
0.47
Dimensions in mm
Fig 8. Package outline SOD882
0.50
0.46
0.65
1.02
0.95
cathode marking on top side
03-04-17
PESD5V0U1BA_BB_BL_1
Product data sheet
Rev. 01 — 25 April 2007
© NXP B.V. 2007. All rights reserved.
7 of 12
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부품번호 | 상세설명 및 기능 | 제조사 |
PESD5V0U1BA | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0U1BB | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |