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PDF PESD5V0U1BL Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0U1BL | |
| Descripción | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | |
| Fabricantes | NXP Semiconductors | |
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PESD5V0U1BA;
PESD5V0U1BB; PESD5V0U1BL
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 25 April 2007
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one data line
from the damage caused by ESD.
Table 1. Product overview
Type number
Package
NXP
PESD5V0U1BA
SOD323
PESD5V0U1BB
SOD523
PESD5V0U1BL
SOD882
JEITA
SC-76
SC-79
-
Package
configuration
very small
flat lead ultra small
leadless ultra small
1.2 Features
I Bidirectional ESD protection of one line I Ultra low leakage current: IRM = 5 nA
I Ultra low diode capacitance: Cd = 2.9 pF I ESD protection of up to 10 kV
I IEC 61000-4-2; level 4 (ESD)
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I 10/100/1000 Ethernet
I Local Area Network (LAN) equipment
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 pF
1 page  
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
ESD TESTER
RZ
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
450 Ω
RG 223/U
50 Ω coax
DUT
(DEVICE
UNDER
TEST)
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
www.DataSheet4U.com
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
GND
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 4. ESD clamping test setup and waveforms
vertical scale = 10 V/div
horizontal scale = 100 ns/div
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab037
PESD5V0U1BA_BB_BL_1
Product data sheet
Rev. 01 — 25 April 2007
© NXP B.V. 2007. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet Development
Preliminary [short] data sheet Qualification
Product [short] data sheet
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
www.DataSheet4U.comoffice. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PESD5V0U1BA_BB_BL_1
Product data sheet
Rev. 01 — 25 April 2007
© NXP B.V. 2007. All rights reserved.
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| PESD5V0U1BA | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
| PESD5V0U1BB | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
| PESD5V0U1BL | (PESD5V0U1Bx) Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
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