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What is PESD5V0L6US?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Low capacitance 6-fold ESD protection diode arrays".


PESD5V0L6US Datasheet PDF - NXP Semiconductors

Part Number PESD5V0L6US
Description Low capacitance 6-fold ESD protection diode arrays
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 02 — 9 November 2004
Product data sheet
1. Product profile
1.1 General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
Table 1: Product overview
Type number
Package
Name
PESD5V0L6UAS
TSSOP8
PESD5V0L6US
SO8
Philips
SOT505-1
SOT96-1
1.2 Features
www.DataSheet4U.com
s ESD protection of up to six lines
s Low diode capacitance
s Max. peak pulse power: PPP = 35 W
s Low clamping voltage: V(CL)R = 15 V
1.3 Applications
s Computers and peripherals
s Communication systems
s Audio and video equipment
s Ultra low leakage current: IRM = 8 nA
s ESD protection of up to 20 kV
s IEC 61000-4-2, level 4 (ESD)
s IEC 61000-4-5 (surge); IPP = 2.5 A.
s High speed data lines
s Parallel ports.
1.4 Quick reference data
Table 2:
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse stand-off voltage
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
Min Typ Max Unit
- - 5V
- 16 19 pF

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PESD5V0L6US equivalent
Philips Semiconductors
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
6. Characteristics
Table 9: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VRWM
IRM
V(CL)R
reverse stand-off voltage
reverse leakage current
clamping voltage
V(BR)
rdif
Cd
breakdown voltage
differential resistance
diode capacitance
Conditions
VRWM = 5 V
IPP = 1 A
IPP = 2.5 A
IR = 1 mA
IR = 1 mA
VR = 0 V; f = 1 MHz;
see Figure 5
Min Typ Max
--5
- 8 25
[1] [2] - - 10
[1] [2] - - 15
6.4 6.8 7.2
- - 100
- 16 19
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform according to IEC 61000-4-5; see Figure 1.
[2] Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
Unit
V
nA
V
V
V
pF
www.DataSheet4U.com
9397 750 13537
Product data sheet
Rev. 02 — 9 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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Featured Datasheets

Part NumberDescriptionMFRS
PESD5V0L6UASThe function is Low capacitance 6-fold ESD protection diode arrays. NXP SemiconductorsNXP Semiconductors
PESD5V0L6USThe function is Low Capacitance 6-fold Esd Protection Diode Array. NXP SemiconductorsNXP Semiconductors
PESD5V0L6USThe function is Low capacitance 6-fold ESD protection diode arrays. NXP SemiconductorsNXP Semiconductors

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