DataSheet.es    


PDF STE70NM50 Data sheet ( Hoja de datos )

Número de pieza STE70NM50
Descripción N-channel Power MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



Hay una vista previa y un enlace de descarga de STE70NM50 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! STE70NM50 Hoja de datos, Descripción, Manual

STE70NM50
N-CHANNEL 500V - 0.045- 70A ISOTOP
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE70NM50
500V
< 0.05
70 A
n TYPICAL RDS(on) = 0.045
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL
n INDUSTRY’S LOWEST ON-RESISTANCE
www.DataSheet4U.com
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2002
Value
Unit
500 V
500 V
±30 V
70 A
44 A
280 A
600 W
6 KV
5 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1)ISD 60A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
1/8

1 page




STE70NM50 pdf
Gate Charge vs Gate-source Voltage
Capacitance Variations
STE70NM50
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet STE70NM50.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
STE70NM50N-channel Power MOSFETST Microelectronics
ST Microelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar