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Datasheet BSS79B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BSS79B | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol v CEO v CBO VEBO
"C
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Ther | Motorola Semiconductors | transistor |
2 | BSS79B | NPN Silicon Switching Transistors SMD Type
TransistIoCrs
NPN Silicon Switching Transistors
BSS79,BSS81
Features
High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-em | Kexin | transistor |
3 | BSS79B | NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) NPN Silicon Switching Transistors
BSS 79 BSS 81
High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP)
q
Type BSS 79 B BSS 79 C BSS 81 B BSS 81 C
Marking CEs CFs CDs CGs
Ordering Code (tape and reel) Q62702-S503 Q62702-S501 Q62702-S555 Q62702 | Siemens Semiconductor Group | transistor |
4 | BSS79B | NPN Silicon Switching Transistors BSS79, BSS81
NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 (PNP)
3
2 1
VPS05161
Type BSS79B BSS79C BSS81B BSS81C
Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 3 | Infineon Technologies AG | transistor |
5 | BSS79B | (BSS79B/C) SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR
ISSUE 2 SEPTEMBER 95 PARTMARKING DETAILS 7 BSS79B - CE BSS79C - CF
BSS79B BSS79C
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipatio | Zetex Semiconductors | transistor |
BSS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BSS100 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D
VDS
100 V
ID
0.22 A
RDS(on)
6Ω
Package TO-92
Ordering Code Q62702-S499 Q62702-S007 Q62702-S2 Siemens Semiconductor Group transistor | | |
2 | BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996
BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces Fairchild Semiconductor transistor | | |
3 | BSS101 | SIPMOS Small-Signal Transistor BSS 101
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 101 Type BSS 101 BSS 101
Pin 2 G Marking SS 101
Pin 3 D
VDS
240 V
ID
0.13 A
RDS(on)
16 Ω
Package TO-92
Ordering Code Q62702-S493 Q62702-S636
Tape and Re Siemens Semiconductor transistor | | |
4 | BSS110 | P-Channel Enhancement Mode Field Effect Transistor May 1999
BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st Fairchild Semiconductor transistor | | |
5 | BSS110 | SIPMOS Small-Signal Transistor BSS 110
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D
VDS
-50 V
ID
-0.17 A
RDS(on)
10 Ω
Package TO-92
Ordering Code Q62702-S500 Q62702-S278 Q67 Siemens Semiconductor transistor | | |
6 | BSS110 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS110 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC07 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
F NXP Semiconductors transistor | | |
7 | BSS119 | SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V
Pin 1 G
Pin 2 S
Pin 3 D
Type BSS 119 Type BSS 119
VDS
100 V
ID
0.17 A
RDS(on)
6Ω
Package SOT-23
Marking sSH
Ordering Code Q67000-S007
Tape and Reel Information E6327
Maximum Ratings Siemens Semiconductor Group transistor | |
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