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PDF FXT614 Data sheet ( Hoja de datos )
| Número de pieza | FXT614 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FXT614 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 100 Volt VCEO
* 800 mA continuous current
* Gain of 10K at IC=500mA
* Ptot= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
FXT614
B
C
E
E-line
TO92 Compatible
VALUE
120
100
10
800
1
-55 to +200
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120
V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 100
V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
100 nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100
1.25
nA
V
VEB=8V, IC=0
IC=800mA, IB=8mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8 V
IC=800mA, VCE=5V*
Static Forward Current hFE
Transfer Ratio
5000
10000
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
3-45
1 page | ||
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| PDF Descargar | [ Datasheet FXT614.PDF ] | |
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