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PDF MGF0916A Data sheet ( Hoja de datos )
| Número de pieza | MGF0916A | |
| Descripción | L & S BAND GaAs FET | |
| Fabricantes | Mitsubishi Electric | |
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MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0916A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
• High power gain
Gp=19dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=6V • Ids=100mA • Rg=1kΩ
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbolwww.DataSheet4U.com
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-8
VGDO Gate to drain breakdown voltage
-8
ID Drain current
250
IGR Reverse gate current
-0.6
IGF Forward gate current
1.5
PT Total power dissipation
1.5
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VGS(off) Gate to source cut-off voltage
gm Transconductance
Po Output power
ηadd
Power added Efficiency
GLP
Linear Power Gain
NF Noise figure
Rth(ch-c) Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=0.1 m A
VDS=3V,ID=100m A
VDS=6V,ID=100m A,f=1.9GHz
Pin=5dBm
VDS=6V,ID=100mA,f=1.9GHz
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Fig.1
Limits
Min. Typ. Max.
150 200 250
-1.5 - -4.5
- 90 -
- 23 -
- 30 -
- 19 -
- 1.0 -
- 70 100
Unit
mA
V
mS
dBm
%
dB
dB
°C/W
Mitsubishi Electric
June/2004
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGF0916A.PDF ] | |
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