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PDF MCZ33880 Data sheet ( Hoja de datos )
| Número de pieza | MCZ33880 | |
| Descripción | Configurable Octal Serial Switch | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Advance Information
Document Number: MC33880
Rev. 5.0, 6/2007
Configurable Octal Serial Switch
with Serial Peripheral Interface
I/O
33880
The 33880 device is an eight-output hardware-configurable high-
side/low-side switch with 8-bit serial input control. Two of the outputs
can be controlled directly via microcontroller for Pulse Width
Modulation (PWM) applications.
The 33880 controls various inductive or incandescent loads by
directly interfacing with a microcontroller.
The circuit's innovative monitoring and protection features include
very low standby currents, “cascadable” fault reporting, internal 40 V
output clamping for low-side configurations, internal -20 V output
clamping for high-side configurations, output-specific diagnostics, and
independent shutdown of outputs.
Features
www.DataSheet4U.com
• Designed to Operate 5.5 V < VPWR < 24.5 V
• 8-Bit SPI for Control and Fault Reporting, 3.3 V/5.0 V Compatible
• Outputs Are Current Limited (0.8 A to 2.0 A) to Drive
Incandescent Lamps
• Output Voltage Clamp Is +45 V (Typical) (Low-Side Drive) and -
20 V (Typical) (High-Side Drive) During Inductive Switching
• Internal Reverse Battery Protection on VPWR
• Loss of Ground or Supply Will Not Energize Loads or Damage IC
• Maximum 5.0 µA IPWR Standby Current at 13 V VPWR up to 95°C
• RDS(ON) of 0.55 Ω at 25°C Typical
• Short Circuit Detect and Current Limit with Automatic Retry
• Independent Overtemperature Protection
• 32-Pin SOICW Has Pins 8, 9, 24, and 25 Grounded for Thermal
Performance
• Pb-Free Packaging Designated by Suffix Code EG and EW
HIGH/LOW-SIDE SWITCH
DW SUFFIX
EG SUFFIX (PB-FREE)
98ASB42345B
28-PIN SOICW
DWB SUFFIX
EW SUFFIX (PB-FREE)
98ARH99137A
32-PIN SOICW
ORDERING INFORMATION
Device
MC33880DW/R2
MCZ33880EG/R2
MC33880DWB/R2
MCZ33880EW/R2
Temperature
Range (TA)
Package
-40°C to 125°C
28 SOICW
32 SOICW
V PWR 33880
5.0 V
5.0 V
MCU
SPI I/O
PWM
VPWR
VDD
EN
CS
SCLK
DI
DO
IN5
IN6
GND
D1
D2
D3
D4
D5
D6
D7
D8
S1
S2
S3
S4
S5
S6
S7
S8
VS
High-Side
MOT H-Bridge
Low-Side
All Output Switches are High- or Low-Side Configurable
Figure 1. 33880 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
1 page  
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
VDD Supply Voltage (1)
VDD
-0.3 to 7.0
VDC
CS, DI, DO, SCLK, IN5, IN6, and EN (1)
–
-0.3 to 7.0
VDC
VPWR Supply Voltage (1)
VPWR
-16 to 50
VDC
Drain 1–8 (2)
5.0 mA ≤ IOUT ≤ 0.3 A
– VDC
-18 to 40
Source 1–8 (3)
5.0 mA ≤ IOUT ≤ 0.3 A
– VDC
-28 to 40
Output Voltage Clamp Low-Side Drive (4)
VOC
40 to 55
VDC
Output Voltage Clamp High-Side Drive (4)
VOC
-15 to -25
VDC
Output Clamp Energy (5)
ECLAMP
50
mJ
ESD Voltage (6)
Human Body Model
Machine Model
Storage Temperature
Operating Case Temperature
Operating Junction Temperature
Maximum Junction Temperature
VESD1
VESD2
TSTG
TC
TJ
–
±2000
±200
-55 to 150
-40 to 125
-40 to 150
-40 to 150
V
°C
°C
°C
°C
Power Dissipation (TA = 25°C) (7)
28 SOIC, Case 751F-05
32 SOIC, Case 1324-02
PD W
1.3
1.7
Thermal Resistance, Junction-to-Ambient, 28 SOIC, Case 751F-05
RθJA
94 °C/W
Thermal Resistance, Junction-to-Ambient, 32 SOIC, Case 1324-02
Thermal Resistance, Junction-to-Thermal Ground Leads, 32 SOIC, Case 1324-02
Peak Package Reflow Temperature During Reflow (5), (6)
RθJA
RθJL
TPPRT
70
18
Note 6
°C/W
°C
Notes
1. Exceeding these limits may cause malfunction or permanent damage to the device.
2. Configured as low-side driver with 300 mA load as current limit.
3. Configured as high-side driver with 300 mA load as current limit.
4. With outputs OFF and 10 mA of test current for low-side driver, 30 mA test current for high-side driver.
5. Maximum output clamp energy capability at 150°C junction temperature using single non-repetitive pulse method.
6. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), and ESD2 testing is performed
in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω).
7. Maximum power dissipation with no heatsink used.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33880
5
5 Page 
ELECTRICAL CHARACTERISTICS
TYPICAL ELECTRICAL CHARACTERISTICS
TYPICAL ELECTRICAL CHARACTERISTICS
14
VPWR @ 16 V
12
10 All Outputs ON
8
6 All Outputs OFF
4
2
-40 -25 0 25 50 75 100
TA, Ambient Temperature (°C)
Figure 12. IPWR vs. Temperature
125
14
14
12 VPWR @ 16 V
12
10
10
8
8
6
6
4
4
2
2
-40 -25 0 25 50 75 100 125
-40 -25 0 25 50 75 100 125
TTAA,,
Ambient
Ambient
Temperature
Temperature
(°C)
Figure 13. Sleep State IPWR vs. Temperature
70
TA = 25°C
60
50
40
30
20
10
0 5.0 10 15 20
VPWR
Figure 14. Sleep State IPWR vs. VPWR
25
1.4
VPWR @ 16 V
1.2
1.0
0.8
0.6
0.4
0.2
-40 -25 0 25 50 75 100 125
TA, Ambient Temperature (°C)
Figure 15. RDS(ON) vs. Temperature @ 250 mA
1.4
VPWR @ 16 V
1.2
1.0
0.8
0.6
0.4
0.2
0 5.0 10 15 20 25
VPWR (V)
Figure 16. RDS(ON) vs. VPWR @ 250 mA
1.6
VPWR @ 16 V
1.5
1.4
1.3
1.2
1.1
1.0
-40 -25 0 25 50 75 100 125
TA, Ambient Temperature (°C)
Figure 17. Current Limit IOUT(LIM) vs. Temperature
Analog Integrated Circuit Device Data
Freescale Semiconductor
33880
11
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| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet MCZ33880.PDF ] | |
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