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PDF APTC60HM70SCTG Data sheet ( Hoja de datos )
| Número de pieza | APTC60HM70SCTG | |
| Descripción | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTC60HM70SCTG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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APTC60HM70SCTG
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VBUS
CR1A
CR3A
Q1 CR1B CR3B
Q3
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 39A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
G1
S1
G2
S2
NTC1
CR2A
OUT1 OUT2
CR4A
Q2 CR2B CR4B
Q4
0/VBUS
G3
S3
G4
S4
NTC2
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
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• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G3
S3
VB US
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS complaint
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
600
39
29
156
±30
70
250
20
1
1800
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–8
1 page  
APTC60HM70SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5 0.9
0.4 0.7
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
200
160 VGS=15&10V
6.5V
6V
120
80
40
0
0
5.5V
5V
4.5V
4V
5 10 15 20
VDS, Drain to Source Voltage (V)
25
1.1
1.05
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 19.5A
VGS=10V
1 VGS=20V
0.95
0.9
0
10 20 30 40 50
ID, Drain Current (A)
60
Transfert Characteristics
140
120
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
20
0
0
TJ=125°C
TJ=25°C
TJ=-55°C
123456
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125
TC, Case Temperature (°C)
150
APT website – http://www.advancedpower.com
5–8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet APTC60HM70SCTG.PDF ] | |
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