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PDF MC33981B Data sheet ( Hoja de datos )
| Número de pieza | MC33981B | |
| Descripción | Single High-Side Switch | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Advance Information
Document Number: MC33981
Rev. 6.0, 5/2007
Single High-Side Switch
(4.0 mΩ), PWM clock up to 60kHz
33981B
The 33981 is a high-frequency, self-protected 4.0 mΩ RDS(ON) high-
side switch used to replace electromechanical relays, fuses, and
discrete devices in power management applications.
The 33981 can be controlled by Pulse-Width Modulation (PWM) with
a frequency up to 60 kHz. It is designed for harsh environments, and it
includes self-recovery features. The 33981 is suitable for loads with
high in-rush current, as well as motors and all types of resistive and
inductive loads.
The 33981 is packaged in a 12 x 12 non-leaded power-enhanced
Power QFN package with exposed tabs.
Features
• Single 4.0 mΩ RDS(ON) Maximum High-Side Switch
• PWM Capability up to 60 kHz with Duty Cycle from 5% to 100%
• Very Low Standby Current
• Slew Rate Control with External Capacitor
• Overcurrent and Overtemperature Protection, Undervoltage
Shutdown and Fault Reporting
• Reverse Battery Protection
• Gate Drive Signal for External Low-Side N-Channel MOSFET with
Protection Features
• Output Current Monitoring
• Temperature Feedback
• Pb-Free Packaging Designated by Suffix Code PNA
www.DataSheet4U.com
HIGH-SIDE SWITCH
Bottom View
SCALE 1:1
PNA (Pb-Free Suffix)
98ARL10521D
16-PIN PQFN (12 X 12)
ORDERING INFORMATION
Device
Temperature
Range (TA)
MC33981BPNA/R2 -40°C to 125°C
Package
16 PQFN
VDD
VDD
I/O
I/O
MCU I/O
I/O
A/D
A/D
VPWR
33981
CONF
FS
INLS
EN
INHS
TEMP
CSNS
VPWR
CBOOT
OUT
DLS
GLS
OCLS SR GND
M
Figure 1. 33981 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
1 page  
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol Min Typ Max Unit
POWER INPUT (VPWR)
Battery Supply Voltage Range
Fully Operational
Extended (6)
VPWR
V
6.0 – 27.0
4.5 – 27.0
VPWR Supply Current
INHS = 1 and OUT Open
INLS = 0
IPWR(ON)
mA
– 10.0 12.0
VPWR Supply Current
INHS = INLS = 0, EN = 5.0 V, OUT Connected to GND
Sleep State Supply Current
(VPWR < 14 V, EN = 0 V, OUT Connected to GND)
TA = 25°C
TA = 125°C
Undervoltage Shutdown
Undervoltage Hysteresis
POWER OUTPUT (IOUT, VPWR)
Output Drain-to-Source ON Resistance (IOUT = 20 A, TA = 25°C)
VPWR = 6.0 V
VPWR = 9.0 V
VPWR = 13.0 V
Output Drain-to-Source ON Resistance (IOUT = 20 A, TA = 150°C)
VPWR = 6.0 V
VPWR = 9.0 V
VPWR = 13.0 V
Output Source-to-Drain ON Resistance (IOUT = -20 A, TA = 25°C)(7)
VPWR = - 12 V
Output Overcurrent Detection Level
9.0 V < VPWR < 16 V
Current Sense Ratio
9.0 V < VPWR < 16 V, CSNS < 4.5 V
Current Sense Ratio (CSR) Accuracy
9.0 V < VPWR < 16 V, CSNS < 4.5 V
Output Current
5.0 A
15 A, 20 A and 30 A
IPWR(SBY)
IPWR(SLEEP)
VPWR(UV)
VPWR(UVHYS)
RDS(ON)25
RDS(ON)150
RSD(ON)
I OCH
CSR
CSR_ACC
–
–
–
2.0
0.05
–
–
–
–
–
–
–
75
–
-20
-15
10.0
–
–
4.0
0.15
–
–
–
–
–
–
–
100
1/20000
–
–
12.0
5.0
50.0
4.5
0.3
6.0
5.0
4.0
10.2
8.5
6.8
8.0
125
–
20
15
mA
µA
V
V
mΩ
mΩ
mΩ
A
–
%
Current Sense Voltage Clamp
ICSNS = 15 mA
VCL(CSNS)
4.5 6.0 7.0
V
Notes
6. OUT can be commanded fully on, PWM is available at room. Low Side Gate driver is available. Protections and Diagnosis are not
available. Min/max parameters are not guaranteed.
7. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33981
5
5 Page 
ELECTRICAL PERFORMANCE CURVES
STATIC ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
1600
1400
1200
1000
800
600
400
200
0
0
2.0 4.0 6.0
SR Capacitor (nF)
8.0
10
Figure 10. VOUT Fall Time vs. SR Capacitor From 10% to 90% of VOUT at 25°C and VPWR = 13 V
Analog Integrated Circuit Device Data
Freescale Semiconductor
33981
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MC33981B.PDF ] | |
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