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What is MGFC41V7177?

This electronic component, produced by the manufacturer "Mitsubishi Electric", performs the same function as "12W INTERNALLY MATCHED GaAs FET".


MGFC41V7177 Datasheet PDF - Mitsubishi Electric

Part Number MGFC41V7177
Description 12W INTERNALLY MATCHED GaAs FET
Manufacturers Mitsubishi Electric 
Logo Mitsubishi Electric Logo 


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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V7177
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V7177 is an internally impedence matched
GaAs power FET especially designed for use in 7.1 - 7.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
7.1 - 7.7GHz band amplifiers
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
24+ /-0 .3
(1)
0.6+/-0.15
R1.2
(2)
(3)
20. 4+ / -0. 2
13.4
QUALITY GRADE
IG
www.DataSheet4U.com
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 3.4 A
Rg = 50(ohm) Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
Symbol
Parameter
VGDO
VGSO
ID
IGR
IGF
PT
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25 DegreesC
Ratings
Unit
-15 V
-15 V
12 A
-30 mA
63 mA
53.6 W
175 DegreesC
-65 to +175 DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm Transconductance
VDS = 3V , ID = 3.0A
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS = 3V , ID = 30mA
VDS = 10V , ID = 3.4A , f = 7.1 - 7.7 GHz
Eadd
Power added efficiency
IM3 *2 3rd order IM distortion
Rth(ch-c) Thermal resistance *1
Delta Vf method
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=7.7GHz,Delta f=10MHz
Min
-
-
-
40
7
-
-42
-
Limits
Typ
-
3
-
41
8
30
-45
-
Max
12
-
-5
-
-
-
-
2.8
Unit
A
S
V
dBm
dB
%
dBc
C/W
MITSUBISHI
ELECTRIC


Part Details

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Information Total 3 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
MGFC41V7177The function is 12W INTERNALLY MATCHED GaAs FET. Mitsubishi ElectricMitsubishi Electric

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