Datasheet.kr   

MGFC45B3436B 데이터시트 PDF




Mitsubishi Electric에서 제조한 전자 부품 MGFC45B3436B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 MGFC45B3436B 자료 제공

부품번호 MGFC45B3436B 기능
기능 30W INTERNALLY MATCHED GaAs FET
제조업체 Mitsubishi Electric
로고 Mitsubishi Electric 로고


MGFC45B3436B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

MGFC45B3436B 데이터시트, 핀배열, 회로
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45B3436B
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45B3436B is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT) = 30W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.4 - 3.6 GHz
Distortion
ACP = -45dBc (TYP.) @ f=3.4 - 3.6 GHz
www.DataSheet4U.com RECOMMENDED BIAS CONDITIONS
VDS = 12 (V)
ID = 0.8 (A)
RG=12 (ohm)
GF-60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
MAXID Maximum drain current
PT *1 Total power dissipation
Tch Channel temperature
Tstg Storage temperature
*1 : Tc=25deg.C
(Ta=25deg.C)
Ratings
-15
-10
10
78
175
-65 / +175
Unit
V
V
A
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 100mA
Po(SAT)
Output power
VDS=12V, ID(RF off)=0.8A, f=3.4-3.6GHz
GLP
Linear power gain
ID Drain current
ACP *2 Adjacent Channel leakage Power
Rth(ch-c) *3
Thermal resistance
VDS=12V, ID(RF off)=0.8A, f=3.4-3.6GHz
Pout=34dBm
delta Vf method
*2 :Mod.3GPP TEST MODEL 1 64code Single Signal
*3 : Channel-case
Min.
-0.5
-
10
-
-
-
Limits
Typ. Max.
- -3.0
45 -
11 -
1.2 1.5
-45 -
- 1.9
Unit
V
dBm
dB
A
dBc
deg.C/W
MITSUBISHI
ELECTRIC
(1/6)
Apr. 2007




MGFC45B3436B pdf, 반도체, 판매, 대치품
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45B3436B
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
Sparameters
freq.
S11
GHz (mag) (ang)
0.5 0.981 166
0.6 0.979 163
0.7 0.978 160
0.8 0.977 157
0.9 0.977 155
1.0 0.976 153
1.1 0.976 149
1.2 0.975 146
1.3 0.974 142
1.4 0.973 139
1.5 0.973 135
1.6 0.972 132
1.7 0.969 127
1.8 0.966 122
1.9 0.963 117
2.0 0.961 111
2.1 0.958 106
2.2 0.957 97
2.3 0.950 90
2.4 0.946 83
2.5 0.940 75
2.6 0.929 66
2.7 0.927 56
2.8 0.918 46
2.9 0.912 34
3.0 0.905 23
3.1 0.882 10
3.2 0.864
-6
3.3 0.809 -20
3.4 0.728 -39
3.5 0.593 -58
3.6 0.375 -76
3.7 0.148 -58
3.8 0.259
-2
3.9 0.452 -14
4.0 0.587 -30
4.1 0.666 -47
4.2 0.716 -61
4.3 0.760 -76
4.4 0.799 -91
4.5 0.820 -104
4.6 0.833 -119
4.7 0.846 -132
4.8 0.859 -145
4.9 0.863 -158
5.0 0.875 -170
5.1 0.886 178
5.2 0.901 166
5.3 0.910 155
5.4 0.915 144
5.5 0.929 135
5.6 0.930 124
5.7 0.941 115
5.8 0.944 107
5.9 0.938 98
6.0 00..995417 9823
S21
(mag) (ang)
0.767
49
0.676
41
0.586
33
0.531
26
0.522
22
0.513
18
0.495
10
0.476
2
0.458
-6
0.440
-14
0.422
-22
0.403
-29
0.422
-38
0.440
-46
0.468
-56
0.504
-66
0.540
-76
0.592
-88
0.663 -100
0.741 -111
0.844 -125
0.954 -139
1.104 -155
1.273 -170
1.476 172
1.733 154
2.016 135
2.400 113
2.807
90
3.326
64
3.853
36
4.244
2
4.228
-32
3.835
-65
3.294
-96
2.775 -122
2.317 -147
1.939 -168
1.648 171
1.415 151
1.204 130
1.023 111
0.867
92
0.734
74
0.617
57
0.520
40
0.440
25
0.377
8
0.319
-6
0.268
-21
0.228
-35
0.193
-47
0.166
-61
0.141
-72
0.122
-84
00..100962 --19045
S12
(mag) (ang)
0.004
34
0.004
28
0.004
21
0.004
16
0.004
15
0.005
14
0.005
12
0.005
10
0.006
8
0.006
6
0.006
4
0.007
2
0.007
-2
0.008
-6
0.008
-12
0.009
-20
0.010
-28
0.010
-36
0.011
-41
0.012
-52
0.012
-64
0.014
-74
0.013
-87
0.014 -108
0.011 -120
0.011 -148
0.008 -179
0.006 110
0.011
54
0.020
6
0.033
-26
0.046
-60
0.058
-93
0.061 -127
0.058 -156
0.054 178
0.052 159
0.049 136
0.044 113
0.037
93
0.031
69
0.026
53
0.021
36
0.017
20
0.014
5
0.011
-6
0.010
-22
0.008
-30
0.008
-59
0.007
-69
0.006
-73
0.006
-75
0.005
-91
0.005 -118
0.005 -117
00..000032 --113139
MITSUBISHI
ELECTRIC
( 4 / 6)
S22
(mag) (ang)
0.921 167
0.919 165
0.916 163
0.913 160
0.912 158
0.910 157
0.907 154
0.904 150
0.901 147
0.898 144
0.895 141
0.892 137
0.881 134
0.870 130
0.857 125
0.844 119
0.831 113
0.806 108
0.785 101
0.760
93
0.717
84
0.673
75
0.624
65
0.566
53
0.495
41
0.418
25
0.339
7
0.246
-16
0.161
-53
0.118 -119
0.171 171
0.267 123
0.340
84
0.374
46
0.374
14
0.366
-17
0.361
-44
0.367
-67
0.393
-88
0.418 -108
0.460 -126
0.502 -143
0.545 -159
0.596 -174
0.641 172
0.684 160
0.724 147
0.761 136
0.791 124
0.815 114
0.838 105
0.859
96
0.874
89
0.885
80
0.897
73
00..899097
6670
Apr. 2007

4페이지












구       성 총 6 페이지수
다운로드[ MGFC45B3436B.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MGFC45B3436B

30W INTERNALLY MATCHED GaAs FET

Mitsubishi Electric
Mitsubishi Electric

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵