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부품번호 | MRFE6P3300HR5 기능 |
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기능 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 12 페이지수
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common - source amplifier
applications in 32 volt analog or digital television transmitter equipment.
•
Typical Narrowband Two - Tone Performance
IDQPo=w1e6r0G0aminA—, P2ou0t.4=
270
dB
Watts
PEP
@
860
MHz:
VDD
=
32
Volts,
Drain Efficiency — 44.8%
IMD — - 28.8 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Designed for Push - Pull Operation Only
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6P3300H
Rev. 0, 5/2007
MRFE6P3300HR3
MRFE6P3300HR5
860 MHz, 300 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
www.DataSheet4U.com
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
RθJC
0.23
0.24
0.27
0.27
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3 MRFE6P3300HR5
1
C1
VGG C2 C3
B1
R3 R1
COAX1
C15
C23
VDD
C18
C16 C17
COAX3
C4
C6
C5
C10 C11
C14
C12
C13
COAX2
COAX4
R2
VGG C7 C8
B2
C20
C24 VDD
C9 C19
Figure 2. 820 - 900 MHz Narrowband Test Circuit Component Layout
C21
C22
MRFE6P3300HR3 MRFE6P3300HR5
4
RF Device Data
Freescale Semiconductor
4페이지 TYPICAL NARROWBAND CHARACTERISTICS
22
21 TC = −30_C
20 25_C
19 85_C
Gps
70
− 30_C
60
25_C
50
85_C
40
18 30
17 20
ηD VDD = 32 Vdc
16
IDQ = 1600 mA
10
f = 860 MHz
15 0
1 10 100 800
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21
20
19
18
17 IDQ = 1600 mA
f = 860 MHz
VDD = 28 V
32 V
30 V
16
0 50 100 150 200 250 300 350 400
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
107
106
105
104
90
110 130 150 170
190 210
230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 32 Vdc, Pout = 270 W PEP, and ηD = 44.8%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 13. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3 MRFE6P3300HR5
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MRFE6P3300HR3 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | Freescale Semiconductor |
MRFE6P3300HR5 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | Freescale Semiconductor |
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