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Número de pieza | MSC81250M | |
Descripción | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSC81250M (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! MSC81250M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
...... REFRACTORY\GOLD METALLIZATION
RUGGEDIZED VSWR 20:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 250 W MIN. WITH 6.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81250M
B RA ND IN G
81250M
PIN CONNECTION
DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique
AMPAC™ package with internal input/output
matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
www.DataSheet4TUJ.com
TSTG
Parameter
Power Dissipation* (TC ≤ 80°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
600
17.8
55
250
− 65 to +200
Unit
W
A
V
°C
°C
0.20
°C/W
October 1992
1/5
1 page MSC81250M
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
www.DatSaGSSh-eTeHt4OUM.ScOomN Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet MSC81250M.PDF ] |
Número de pieza | Descripción | Fabricantes |
MSC81250M | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | STMicroelectronics |
MSC81250M | RF & MICROWAVE TRANSISTORS | STMicroelectronics |
MSC81250M | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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