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PDF APTM10DUM02 Data sheet ( Hoja de datos )
| Número de pieza | APTM10DUM02 | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM10DUM02 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTM10DUM02
Dual Common Source
MOSFET Power Module
VDSS = 100V
RDSon = 2.25mΩ typ @ Tj = 25°C
ID = 495A @ Tc = 25°C
D1 D2
Q1 Q2
G1
S1
S
G1 D1 S D2
www.DataSheet4U.com
S1
S2
G2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G2
Features
• Power MOS V® MOSFETs
S2 - Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
100
495
370
1900
±30
2.5
1250
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Crss
1000
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM10DUM02
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 200A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
10000
Maximum Safe Operating Area
limited by
1000 RDSon
100µs
1ms
100
10ms
10
Single pulse
TJ=150°C
1
1 10 100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=400A
14 TJ=25°C
VDS=20V
12
10 VDS=50V
8 VDS=80V
6
4
2
0
0 400 800 1200 1600 2000
Gate Charge (nC)
APT website – http://www.advancedpower.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM10DUM02.PDF ] | |
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