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PDF APTM20AM10ST Data sheet ( Hoja de datos )
| Número de pieza | APTM20AM10ST | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM20AM10ST (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTM20AM10ST
Phase leg
Series & parallel diodes
MOSFET Power Module
VDSS = 200V
RDSon = 10mW max @ Tj = 25°C
ID = 175A @ Tc = 25°C
www.DataSheet4U.com
Q1
G1
S1
Q2
G2
S2
VBUS
NT C2
OUT
0/VBU S
NT C1
VBUS
S1
G1
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
175
131
700
±30
10
694
89
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM20AM10ST
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 87.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
100
Maximum Safe Operating Area
limited by
RDSon
100µs
1ms
10ms
10
Single pulse
TJ=150°C
1
DC line
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=150A
10 TJ=25°C
VDS=40V
VDS=100V
8 VDS=160V
6
4
2
0
0 50 100 150 200 250
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM20AM10ST.PDF ] | |
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