PDF MWE6IC9100GNR1 Data sheet ( Hoja de datos )

Número de pieza	MWE6IC9100GNR1
Descripción	RF LDMOS Wideband Integrated Power Amplifiers
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application • Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.5 dB Power Added Efficiency — 54% GSM EDGE Application • Typical GSM EDGE Performance: 870PmowAe, rPGouatin= 50 Watts Avg., — 35.5 dB Full VFDreDq=ue2n8cVyoBltasn, dID(Q8169=--293600 mMAH,zI)DQ2 = Power Added Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = --63 dBc Spectral Regrowth @ 600 kHz Offset = --81 dBc EVM — 2% rms • Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW Pout. Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MWE6IC9100N Rev. 3, 12/2008 MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618--02 TO--270 WB--14 PLASTIC MWE6IC9100NR1 CASE 1621--02 TO--270 WB--14 GULL PLASTIC MWE6IC9100GNR1 CASE 1617--02 TO--272 WB--14 PLASTIC MWE6IC9100NBR1 VDS1 RFin VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) RFout/VDS2 NC VDS1 NC NC NC RFin RFin NC VGS1 VGS2 VDS1 NC 1 2 3 4 14 5 6 7 8 9 13 10 11 12 (Top View) RFout /VDS2 RFout /VDS2 Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007--2008. All rights reserved. RF Device Data Freescale Semiconductor MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 1 1 page MWE6IC9100N Rev. 4 C17 VDD1 C22 C11 VGG1 C15 R1 C16 R2 VGG2 C13 C14 C12 C19 C18 C7 C20 C8 VDD2 C1 C3 C23 C5 C6 C4 C2 C21 C24 C9 C10 Figure 4. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 5 5 Page Zo = 50 Ω f = 980 MHz f = 820 MHz Zload f = 820 MHz Zsource f = 980 MHz VDD = 26 Vdc, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 W CW f MHz Zsource Ω Zload Ω 820 35.40 + j21.50 0.516 -- j0.365 840 35.00 + j18.00 0.638 -- j0.172 860 35.00 + j15.50 0.768 -- j0.010 880 34.50 + j12.20 0.874 + j0.071 900 34.00 + j9.00 1.030 + j0.133 920 34.30 + j7.20 1.101 + j0.082 940 38.50 + j6.00 1.088 + j0.037 960 42.00 + j7.40 1.011 + j0.018 980 45.55 + j12.75 0.872 + j0.051 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network RF Device Data Freescale Semiconductor Z source Z load Figure 27. Series Equivalent Source and Load Impedance MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 11 11 Page

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Número de pieza	Descripción	Fabricantes
MWE6IC9100GNR1	RF LDMOS Wideband Integrated Power Amplifiers	Freescale Semiconductor

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