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PDF TQP2420G Data sheet ( Hoja de datos )

Número de pieza TQP2420G
Descripción ISM Band InGaP HBT Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TQP2420G Hoja de datos, Descripción, Manual

WLAN PRODUCTS
Vcc1
12
N/C
11
RF In 1
N/C
10
9 RF Out / Vcc2
TQP2420G
Datasheet
2.4GHz ISM Band InGaP
HBT Power Amplifier
N/C 2
8 RF Out / Vcc2
Vref 3
Bias controller
45
Vcc N/C
6
GND
7 Vdet
Product Description:
The TQP2420G is a high performance, high linearity, medium-power amplifier
designed for 802.11b/g WLAN and other applications in the 2.4GHz ISM band.
The device exhibits industry-leading power added efficiency under 802.11b and
802.11g modulated signals. The power amplifier is manufactured using
TriQuint’s InGaP HBT process and is packaged in an industry standard 3mm x
www.DataSheet4U.com 3mm VQFN-12 package.
Selected Electrical Specifications:
Parameter
Frequency Range
min typ
2400 -
Power Gain
28 29
Linear Output Power (802.11g
modulation)
19
Error Vector Magnitude (Pout =
+19dBm, 54Mbps OFDM Signal)
2
Linear Output Power (guaranteed
ACP under 802.11b modulation)
22 23
802.11b ACP; +22.0 dBm Output;
1st Side Lobe
-35
802.11b ACP; +22.0 dBm Output;
2nd Side Lobe
-56
Test Conditions: Ta=25°C; Vref= 2.95V; Vcc=Vc1=Vc2=3.3V
max units
2500 MHz
dB
dBm
%
dBm
dBc
dBc
Features
High Linearity, 2.4 GHz ISM Band
PA for 802.11b/g WLAN Systems
Integrated Output Power Detector
Leadless 3.0 x 3.0 mm SMT
Package
Temperature Compensated Bias
Network with Bias Shutdown
Mode
EVM < 2% @ +19dBm Linear
Output Power 802.11g modulation
+23 dBm Linear Output Power
802.11b modulation
Applications
802.11b/g WLAN
2.4GHz ISM Band Applications
Cordless Phones
Broadband Systems
For further information please visit www.triquint.com
Datasheet rev 4.0; February 20, 2004.
.
1 of 13

1 page




TQP2420G pdf
Evaluation Board-WLAN PA; 242x Evaluation board
TQP2420G
Datasheet
Layer/Descriptions
Dielectric: FR4: Er=4.6
Top: 1 oz. Plated Copper
Dielectric 1 : 6 mils
Mid 1: 1 oz. Copper
Dielectric 2: 28 mils
Mid 2: 1 oz. Copper
Dielectric 3: 6 mils
Bottom: 1 oz. Plated Copper
Bill of Materials
Evaluation Board
Integrated Circuit ID
242X
TQP2420
Part # Quantity Component ID Size
Value
1 1 C0
0402
1.2
2 1 C5
0402
1.5
3 1 C1
0402
2.2
4
3 C2,C3,C7
0402
0.033
5 1 C4
0402
2.7
6 2 C6,C9
.130x.070 10
7 1 C10
0402
22
8 1 R1
0402 10000
9 1 R2
0402
0
10 1 R3
0402
0
11 1 L2
0402
6.8
12 1 C8
0402
10
13 1 Q1
MLF
14 2 J1,J2
15 2 J3,J4
16 1 PCB
Units
pF
pF
pF
uF
pF
uF
pF
ohms
ohms
ohms
nH
pF
N/A
Manufacturer
P/N
Comments
Skywell
Skywell
Rohm
Murata
Rohm
Murata
Murata
Rhom
Rhom
Rohm
Toko
Murata
Triquint
Johnson
042CG1R2C500BA
042CG1R5C500BA
MCH155A2R2CK
GRP155R71A333KA01B
MCH155A2R7CK
GJ232RF51E106ZD01K
GRP1555C1H220JZ01B
MCR01J133
LL1005-FH6N8J
GRP1555C1H100JZ01B
TQP2420G
142-0711-881
242X
DC Connector
Printed circuit board
Page 5 of 13
For additional information and latest specifications, see our website: www.triquint.com
TQP2420G Preliminary Datasheet rev 4.0;February 20, 2004.

5 Page





TQP2420G arduino
TQP2420G
Datasheet
Device Junction Temperature
•The plot is an estimate of the first and
second stage transistor temperatures for
an amplifier biased at a collector voltage
of 3.3V and Vref= 2.95V. The paddle
temperature is +85 deg-C. The actual
temperature will vary dependent on the
method used to attach the package to the
final assembly board.
180
170
160
150
140
130
120
110
100
-20
Junction Temperature vs Output power
TQP2420B
Package Baseplate =85 deg-C
Stage 1
Stage 2
-10 0
10
MMIC Output power (dBm)
20
Page 11 of 13
For additional information and latest specifications, see our website: www.triquint.com
TQP2420G Preliminary Datasheet rev 4.0;February 20, 2004.

11 Page







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