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PDF TQP4M4003 Data sheet ( Hoja de datos )

Número de pieza TQP4M4003
Descripción SPDT High Power 2.5V GSM Antenna Switch
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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TQP4M4003
(Preliminary data sheet Rev0.2)
SPDT High Power 2.5V GSM Antenna Switch
Features:
SLIM-7 Packaged PHEMT GaAs MMIC Die
Smallest Available GSM SPDT Switch
1.3 x 2.0 mm Footprint
Thin Package: 0.4mm for LTCC Modules
Excellent Harmonic Performance
–74dBc 2nd Harmonic at GSM 850/900, +35dBm
–81dBc 2nd Harmonic at DCS/PCS, +33 dBm
–77dBc 3rd Harmonic at GSM 850/900, +35dBm
–78dBc 3rd Harmonic at DCS/PCS, +33 dBm
Highly Linear Control Voltage, to +2.0V
High Isolation: -27dB typ 0.5 to 2 GHz
Low Insertion Loss: 0.39 dB typ at GSM850/900
0.51 dB typ at DCS/PCS
Very Low Control Current
Application:
GSM Handset Antenna Switch Modules (ASM)
and Front End Modules (FEM)
SLIM-7 Package Outline:
Top
View
1.3 +0.11/.-30.05
Pin 1
xxxx
2.0 +20..10/ -0.05
All dimensions in mm
ANT 3
4
Bottom
View VC1
2
5
RF1 1
6
0.4 Max
NC
VC2
RF2
Description:www.DataSheet4U.com
TriQuint’s TQP4M4003 is a high power antenna switch in a single pole double throw (SPDT) configuration. The die
utilizes TriQuint’s PHEMT MMIC switch process to provide optimized performance for use in GSM applications. The
SLIM-7 package is 0.4mm thick with a 1.3 x 2.0 mm footprint, which is ideally suited to replace package PIN diodes
on height critical LTCC modules. PHEMT Switches are a very low DC current replacement for classic PIN diode
based switches.
Electrical Performance: Ta = 25°C, Zo=50 Ohms, Vcontrol = 0V / 2.5V 1
Parameter
Test Conditions
Units
Min
Typ
Max
Insertion Loss
GSM850/900
dB 0.40
Insertion Loss
DCS/PCS
dB 0.50
Isolation RF1 to RF2 One port on.
dB -27
2nd Harmonic
GSM850/900, Pin = +35 dBm
dBc -74
2nd Harmonic
DCS/PCS, Pin = +33 dBm
dBc -81
3rd Harmonic
GSM850/900, Pin = +35 dBm
dBc -77
3rd Harmonic
DCS/PCS, Pin = +33 dBm
dBc -78
Return Loss
0.5 to 2.0GHz
dB -20
Leakage Current
-
µA 100
Trise, TFall
10% to 90% RF , 90% to 10% RF
µS
1
Ton , Toff
50% control to 90% RF, and 50% control to 10% RF
µS
1
Truth Table: 2, 3
VC1 VC2 ANT-RF1 ANT-RF2
0 1 Off On
1 0 On Off
Copyright © 2004TriQuint (pdc rev 0.2. 01/07/04
All specifications subject to change without notice
Notes:
1. External DC blocking capacitors are required at all RF ports
2. State 1 = +2.0V to +5.0V, State 0 = 0V to +0.2V
3. Differential voltage from State 1 to State 2 must be a minimum of 2.0V
4. Exceeding any parameter either individually or in combination may
cause permanent damage.
1

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TQP4M4003 pdf
TQP4M4003 Preliminary Datasheet
SPDT High Power 2.5V GSM Antenna Switch
Part Marking:
where XXXX = last four digits of batch
Part Orientation on Reel:
Ordering Information:
Type
TQP4M4003
Marking
XXXX
Package
SLIM-7
ESD: Electrostatic Discharge Sensitive Device: Observe Handling Precautions!
Additional Information
For latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Tel: (503) 615-9000
Fax: (503) 615-8902
For technical questions and additional information on specific applications:
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions.
TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the
user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of
the circuits described herein are implied or granted to any third party.
TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems.
Copyright © 2004TriQuint Semiconductor, Inc. All rights reserved.
Revision 0.2 January 7, 2004
For additional information and latest specifications, see our website: www.triquint.com
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