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PDF TQP770001 Data sheet ( Hoja de datos )
| Número de pieza | TQP770001 | |
| Descripción | Bluetooth Two Stage (HBT) Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TQP770001
Preliminary Data Sheet
Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant)
Functional Block Diagram
Product Description
The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT
GaAs technology offering state of the art reliability, temperature stability and
ruggedness. The PA is a two-stage design requiring several SMD tuning
elementswww.DataSheet4U.com for input and output matching, gain shaping, and bias injection.
Features include an integrated bias controller with a power control (variable gain)
function. The bias controller also acts to provide temperature compensation. The
PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back
paddle. A recommended drawing is provided in section 4.3.2. This PA is
designed to operate in Bluetooth v2.0 class 1 systems. It is also intended to be
Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for
both 2 Mbps and 3 Mbps modulation modes.
Features
• InGaP HBT Technology
• Bluetooth v2.0 class 1 systems
• High Efficiency: 50% @ 21.5dBm
• EDR (Enhanced Data Rate) Compliant
• Under EDR modulation, its low AM-AM and
AM-PM distortion guarantee high modulation
accuracy
• Will operate under Bluetooth FSK, 8DPSK,
and Pi/4-DQPSK modulations
• Optimized for 50 ohm System
• Integrated bias controller with a power
control (variable gain) function
• Small 12-pin QFN, 2x2mm module
• Lead-free 260°C RoHS Compliant
• Full ESD Protection
Applications
• Bluetooth v2.0 + EDR class 1 systems
Electrical Specifications
Conditions: Vcc = 3.3 V, T = 25°C
Package Style
Parameter
Frequency
RF transmit power Vctrl=3.3V
Gain @ Pin= -10 dBm
PAE @ 21.5dBm
Min Typ Max
2.4 2.5
19.5 21.0
25.0 27.0
-
-
50
Units
GHz
dBm
dB
%
12-Pin 2.0x2.0x0.6mm STSLP Package
Bottom View
Preliminary Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website: www.triquint.com
Revision B, Sept. 18, 2006
1
1 page  
TQP770001
Preliminary Data Sheet
Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant)
Application Circuit
Part
C1
C2
C3
C4
C5
C6
C7
C8
C9
L1
L2
L3
R1
R2
R3
R4
R5
Description
9.1 pF ceramic cap
0.01uF ceramic cap
1.0uF ceramic cap
33pF ceramic cap
0.01uF ceramic cap
1.0uF ceramic cap
1.0uF ceramic cap
2.2pF ceramic cap
22pF ceramic cap
1.2nH chip inductor
8.2nH chip inductor
1.0 nH chip inductor
11.0 Ohm chip resistor
0.0 Ohm chip resistor
0.0 Ohm chip resistor
0.0 Ohm chip resistor
0.0 Ohm chip resistor
Size
201
201
402
201
201
402
402
201
201
201
201
201
201
402
402
402
402
Comment
Provides DC block and input matching.
Provides low frequency bypass at Vctrl.
Provides low frequency bypass at Vcc1.
Inter-stage matching, RF choke and RF bypass L1/C4 .
Provides low frequency bypass at Venable.
Provides low frequency bypass at Vcc.
Provides low frequency bypass at Vcc2.
Provides output matching circuit C8/L3.
Provides Dc blocking.
Inter-stage matching, RF choke and RF bypass L1/C4 .
Provides RF choke at Vcc2.
Provides output matching circuit C8/L3.
Provides RF stability.
DC jumper. Install to bias Vcc1 independently from Vcc and Vcc2.
DC jumper. Install to bias Vcc2 independently from Vcc and Vcc2
DC jumper. Install to connect Vcc1 bias to Vcc.
DC jumper. Install to connect Vcc2 bias to Vcc.
Preliminary Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website: www.triquint.com
Revision B, Sept. 18, 2006
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TQP770001.PDF ] | |
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