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부품번호 | TQPHT 기능 |
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기능 | pHEMT Foundry Service | ||
제조업체 | TriQuint Semiconductor | ||
로고 | |||
Production Process
TQPHT
0.5 um pHEMT Foundry Service
Nitride
Metal 2
Metal 2 - 4um
Dielectric
Dielectric
Metal 1
Metal 1
Dielectric
MIM Metal
Metal 0
Metal 1 - 2um
NiCr
N+ Pseudomorphic
Channel
pHEMT
IsoIlasotiloantiIomnpIlmanptlant
MIM Capacitor
NiCr Resistor
Semi-Insulating GaAs Substrate
www.DataSheet4U.com
0.5 um pHEMT Device Cross-Section
Features
• D-Mode, -0.8 V Vp
• InGaAs Active Layer pHEMT
Process
• 0.5 um Optical Lithography
Gates
• 17 V D-G Breakdown Voltage
• High Density Interconnects:
• 2 Global
• 1 Local
• High-Q Passives
• Thin Film Resistors
• High Value Capacitors
• Backside Vias Optional
• Based on Production 0.25 µm
pHEMT and Passives Processes
• TOM3 FET Models Available
General Description
TriQuint’s 0.5 µm pHEMT process is based on our production
released 0.25 µm gate process. TQPHT substitutes lower cost
optical lithography in place of e-beam and adds TriQuint’s
unique thick metal scheme. This process is targeted for high
efficiency and linearity in power amplifiers, low noise amplifiers,
and linear, low loss and high isolation RF switch applications.
The TQPHT process offers a D-Mode pHEMT with a –0.8 V
pinch off. The three metal interconnecting layers are encapsu-
lated in a high performance dielectric that allows wiring flexibil-
ity, optimized die size and plastic packaging simplicity. Precision
NiCr resistors and high value MIM capacitors are included al-
lowing higher levels of integration, while maintaining smaller,
cost –effective die sizes.
Applications
• Highly Efficient and Linear
Power Amplifiers
• Low Loss, High Isolation
Switches for Wireless Trans-
ceivers and Basestations
• Higher Supply Voltage Applica-
tions
• Integrated RF Front Ends–
LNA, SW, PA
Fully Released
Production Process
Page 1 of 5; Rev 2.0 7/22/03
Production Process
TQPHT
0.5 um pHEMT Foundry Service
Gmax versus Vgs and Frequency:
300 um Device
Gm ax versus Vgs
26
24
22
20
18
16
14
12
-0.6 -0.4 -0.2
0
0.2 0.4 0.6
Vgs (Volts)
F re q@ 2 .1G H z
F re q@ 4 .1G H z
F re q@ 6 .1G H z
F re q@ 8 .1G H z
F re q@ 10 .1G H z
F re q@ 12 .1G H z
I-V Characteristics:
300 um Device
Ids versus Vgs
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
012 3456 789
Vds (Volts)
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Semiconductors for Communications
www.triquint.com
Page 4 of 5; Rev 2.0 7/22/03
Vgs=-0.8V
Vgs=-0.6V
Vgs=-0.4V
Vgs=-0.2V
Vgs=0V
Vgs=0.2V
Vgs=0.4V
Vgs=0.6V
Phone: 503-615-9000
Fax: 503-615-8905
Email: [email protected]
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부품번호 | 상세설명 및 기능 | 제조사 |
TQPHT | pHEMT Foundry Service | TriQuint Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |