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PDF 2SJ624 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ624 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ624
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ624 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
ORDERING INFORMATION
www.DataSheet4U.com
PART NUMBER
PACKAGE
2SJ624
SC-96 (Mini Mold Thin Type)
Marking: XH
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
3
12
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation
Total Power Dissipation Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
–20
m8.0
m4.5
m18
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15890EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
VGS = −4.5 V
Pulsed
80
TA = 125°C
60 75°C
25°C
40 −25°C
20
0
-0.01
-0.1 -1 -10
ID - Drain Current - A
-100
2SJ624
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
VGS = −2.5 V
Pulsed
100
TA = 125°C
75°C
80
25°C
60 −25°C
40
20
-0.01
-0.1 -1 -10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
VGS = −1.8 V
Pulsed
100
TA = 125°C
75°C
25°C
80
60 −25°C
40
-0.01
-0.1 -1 -10
ID - Drain Current - A
-100
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
tr
td(on)
1
-0.1
-1
ID - Drain Current - A
-10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
Coss
Crss
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
1 VGS = 0 V
0.1
10
-0.1
-1 -10
VDS - Drain to Source Voltage - V
-100
0.01
0.4
0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
Data Sheet D15890EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ624.PDF ] | |
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