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PDF 2SJ626 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ626 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly
by a 4.0 V power source.
The 2SJ626 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16+–00..016
3
12
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
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PART NUMBER
PACKAGE
2SJ626
Marking: XN
SC-96 (Mini Mold Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation
Total Power Dissipation Note2
VGSS
ID(DC)
ID(pulse)
PT1
PT2
m20
m1.5
m6.0
0.2
1.25
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15962EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
1 page  
2SJ626
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
800
600 TA = 125°C
75°C
400
25°C
-25°C
200
0
-0.01
Pulsed
VGS = −10 V
-0.1 -1
ID - Drain Current - A
-10
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
800
TTAAA===111222555°°C°CC
600
75°C
25°C
400
-25°C
200
0
-0.01
1000
Pulsed
VGS = −4.0 V
-0.1 -1
ID - Drain Current – A
-10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
C iss f = 1.0 MHz
100 C oss
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
800
TA = 125°C
600
75°C
400 25°C
−25°C
200
0
-0.01
Pulsed
VGS = −4.5 V
-0.1 -1
ID - Drain Current - A
-10
SWITCHING CHARACTERISTICS
1000
100
10
1
-0.1
t d(off)
tf
tr
t d(on)
VDD = −30 V
VGS = −10 V
RG = 10 Ω
-1
ID - Drain Current - A
-10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
1
10 C rss
0.1
1
-0.1 -1 -10 -100
VDS - Drain to Source Voltage - V
0.01
0.4 0.6 0.8
Pulsed
VGS = 0 V
1 1.2
VF(S-D) - Source to Drain Voltage - V
Data Sheet D15962EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ626.PDF ] | |
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