(PDF) AO6402L Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	AO6402L
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Alpha & Omega Semiconductors
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No Preview Available ! Rev 3:Nov 2004 AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 6.9A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) www.DataSheet4U.com TSOP-6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6.9 5.8 20 2 1.44 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. 1 page

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PDF AO6402L Data sheet ( Hoja de datos )