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TT251N 데이터시트 PDF




Eupec에서 제조한 전자 부품 TT251N은 전자 산업 및 응용 분야에서
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부품번호 TT251N 기능
기능 Netz-Thyristor-Modul Phase Control Thyristor Module
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TT251N 데이터시트, 핀배열, 회로
N Datenblatt / Data sheet
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT251N
TT251N
TD251N
------------------------------------------------------------------------------------------------------------------------------Ke nndaten
Elektrische EigenschaftenElektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltages
VDRM,VRRM
1200
1600
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = -40°C... Tvj max
Tvj = +25°C... Tvj max
VDSM
VRSM
1200
1600
1300
1700
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
ITRMSM
TC = 85°C
TC = 82°C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6th letter F
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
1400 V
1800 V
1400 V
1800 V
1500 V
1900 V
410 A
250 A
261 A
9100 A
8000 A
414000 A²s
320000 A²s
250 A/µs
1000 V/µs
www.DataSheet4U.com
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = Tvj max , iT = 800 A
vT
Tvj = Tvj max
V(TO)
Tvj = Tvj max
rT
Tvj = 25°C, vD = 6 V
IGT
Tvj = 25°C, vD = 6 V
VGT
Tvj = Tvj max , vD = 6 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 6 V, RA = 5
IH
Tvj = 25°C, vD = 6 V, RGK 10
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 747-6
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs
IL
iD, iR
tgd
max. 1,4 V
0,8 V
0,7 m
max. 200 mA
max.
2V
max.
max.
max.
10 mA
5 mA
0,2 V
max. 300 mA
max. 1200 mA
max. 50 mA
max.
3 µs
prepared by: C.Drilling
approved by: J. Novotny
BIP AC / Warstein,den 26.09.85 Tscharn
date of publication: 23.09.02
revision:
1
A10 /85
Seite/page 1/12




TT251N pdf, 반도체, 판매, 대치품
N Datenblatt / Data sheet
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT251N
R,T – Werte
Di
R,T-Werte
Analytische Elemente des transienten Wärmewiderstandes Z thJC für DC
Analytical elements of transient thermal impedance Z thJC for DC
Pos. n
1
2
3
4
5
6
7
Rthn [°C/W]
0,0031
0,0097
0,0257
0,0429
0,0426
τn [s]
0,0009
0,008
0,11
Analytische Funktion / Analytical function:
0,61 3,06
Snmax
–t
Z thJC =
R thn 1 - e tn
n=1
Pos. n
Rthn [°C/W]
τn [s]
Luftselbstkühlung / Natural cooling
3 Module pro Kühlkörper / 3 modules per heatsink
Kühlkörper / Heatsink type: KM17 (45W)
Analytische Elemente des transienten Wärmewiderstandes Z thCA
Analytical elements of transient thermal impedance Z thCA
123456
1,6
0,0726
0,0174
1400
30
2
Pos. n
Rthn [°C/W]
τn [s]
Verstärkte Kühlung / Forced cooling
3 Module pro Kühlkörper / 3 modules per heatsink
Kühlkörper / Heatsink type: KM17 (Papst 4650N)
Analytische Elemente des transienten Wärmewiderstandes Z thCA
Analytical elements of transient thermal impedance Z thCA
123456
0,475 0,08 0,015
458 40,4 4,11
Analytische Funktion / Analytical function:
Snmax
–t
ZthCA = Rthn 1 - e tn
n=1
7
7
BIP AC / Warstein,den 26.09.85 Tscharn
A10 /85
Seite/page 4/12

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TT251N 전자부품, 판매, 대치품
N Datenblatt / Data sheet
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT251N
140
Gehäusetemperatur bei Sinus
120
0 180°
100
80
60
40
20
0
140
Q = 30°
60° 90° 120°
180°
50 100 150 200 250
ITAVM [A]
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(ITAVM)
Sinusförmiger Strom / Sinusoidal current Strombelastung je Zweig / Current load per arm
Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen)
Calculation base PTAV (switching losses should be considered separately)
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
Gehäusetemperatur bei Rechteck
120
0 180°
100
80
60
40
Q = 30°
60° 90° 120°
180°
DC
20
0
50 100 150 200 250 300 350 400
ITAVM [A]
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(ITAVM)
Rechteckförmiger Strom / Rectangular current Strombelastung je Zweig / Current load per arm
Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen)
Calculation base PTAV (switching losses should be considered separately)
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
BIP AC / Warstein,den 26.09.85 Tscharn
A10 /85
Seite/page
450
7/12

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부품번호상세설명 및 기능제조사
TT251N

Netz-Thyristor-Modul Phase Control Thyristor Module

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