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부품번호 | IRLU8113PBF 기능 |
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기능 | HEXFET Power MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
www.DataSheet4U.com
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through
are on page 11
www.irf.com
PD - 95779A
IRLR8113PbF
IRLU8113PbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 6.0m
22nC
D-Pak
IRLR8113
I-Pak
IRLU8113
Max.
30
± 20
94f
67f
380
89
44
0.59
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
–––
–––
Max.
1.69
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/7/04
IRLR/U8113PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 12A
5.0
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
30
1000.00
100.00
TJ = 175°C
10.00
1.00 TJ = 25°C
0.10
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRLR/U8113PbF
+
-
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
Id
Vds
Vgs
Vgs(th)
www.irf.com
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRLU8113PBF | HEXFET Power MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |