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부품번호 | RD06HHF1 기능 |
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기능 | Silicon MOSFET Power Transistor | ||
제조업체 | Mitsubishi Electric | ||
로고 | |||
전체 7 페이지수
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
1.2+/-0.4
123
0.8+0.10/-0.15
2.5 2.5
5deg
ABSOLUTE MAXIMUM RATINGS
(Tc=25www.DataSheet4U.com
°C
UNLESS
OTHERWISE
NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
Pin Input power
ID Drain current
Zg=Zl=50Ω
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
9.5MAX
RATINGS UNIT
50 V
+/- 20
V
27.8 W
0.3 W
3A
150 °C
-40 to +150 °C
4.5 °C/W
0.5+0.10/-0.15
PIN
1.Gate
2.Source
3.Drain
UNIT:mm
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=0.15W,
f=30MHz, Idq=0.5A
VDD=15.2V,Po=6W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
- - 10
- -1
1.9 - 4.9
6 10 -
55 65
-
No destroy
UNIT
uA
uA
V
W
%
-
RD06HHF1
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
TEST CIRCUIT(f=30MHz)
220pF
RF-IN
C2
220pF
Vgg
8.2KOHM
C1
100pF
1KOHM
L3 L4
C1
1OHM
150/120pF 56pF
Vdd
C1
L2
330uF,50V
84pF
10uF,50V*3
C1
L1 56pF
30pF
L5
100pF
L6 C2 RF-OUT
200/200pF 100pF
85
76
91
100
5
16
35
46
65
C1:100pF,0.022uF,0.1uF in parallel
C2:470uF*2 in parallel
L1:10Turns,I.D8mm,D0.9mm copper wire
L2:10Turns,I.D6mm,D1.6mm silver plated copper wire
L3:5Turns,I.D5.6mm,D0.9mm copper wire
L4:6Turns,I.D5.6mm,D0.9mm copper wire
L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm
L6:7Turns,I.D5.6mm,D0.9mm copper wire
1.5
18
36
42
45
45
67
75
91
100
Dimensions:mm
Note:Board material- teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
/
RD06HHF1
MITSUBISHI ELECTRIC
4/7
REV.5 2 APRIL. 2004
4페이지 ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD06HHF1
MITSUBISHI ELECTRIC
7/7
REV.5 2 APRIL. 2004
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
RD06HHF1 | Silicon MOSFET Power Transistor | Mitsubishi Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |