Datasheet.kr   

RD06HHF1 데이터시트 PDF




Mitsubishi Electric에서 제조한 전자 부품 RD06HHF1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 RD06HHF1 자료 제공

부품번호 RD06HHF1 기능
기능 Silicon MOSFET Power Transistor
제조업체 Mitsubishi Electric
로고 Mitsubishi Electric 로고


RD06HHF1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

RD06HHF1 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
1.2+/-0.4
123
0.8+0.10/-0.15
2.5 2.5
5deg
ABSOLUTE MAXIMUM RATINGS
(Tc=25www.DataSheet4U.com
°C
UNLESS
OTHERWISE
NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
Pin Input power
ID Drain current
Zg=Zl=50
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
9.5MAX
RATINGS UNIT
50 V
+/- 20
V
27.8 W
0.3 W
3A
150 °C
-40 to +150 °C
4.5 °C/W
0.5+0.10/-0.15
PIN
1.Gate
2.Source
3.Drain
UNIT:mm
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=0.15W,
f=30MHz, Idq=0.5A
VDD=15.2V,Po=6W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
- - 10
- -1
1.9 - 4.9
6 10 -
55 65
-
No destroy
UNIT
uA
uA
V
W
%
-
RD06HHF1
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004




RD06HHF1 pdf, 반도체, 판매, 대치품
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
TEST CIRCUIT(f=30MHz)
220pF
RF-IN
C2
220pF
Vgg
8.2KOHM
C1
100pF
1KOHM
L3 L4
C1
1OHM
150/120pF 56pF
Vdd
C1
L2
330uF,50V
84pF
10uF,50V*3
C1
L1 56pF
30pF
L5
100pF
L6 C2 RF-OUT
200/200pF 100pF
85
76
91
100
5
16
35
46
65
C1:100pF,0.022uF,0.1uF in parallel
C2:470uF*2 in parallel
L1:10Turns,I.D8mm,D0.9mm copper wire
L2:10Turns,I.D6mm,D1.6mm silver plated copper wire
L3:5Turns,I.D5.6mm,D0.9mm copper wire
L4:6Turns,I.D5.6mm,D0.9mm copper wire
L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm
L6:7Turns,I.D5.6mm,D0.9mm copper wire
1.5
18
36
42
45
45
67
75
91
100
Dimensions:mm
Note:Board material- teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
/
RD06HHF1
MITSUBISHI ELECTRIC
4/7
REV.5 2 APRIL. 2004

4페이지










RD06HHF1 전자부품, 판매, 대치품
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD06HHF1
MITSUBISHI ELECTRIC
7/7
REV.5 2 APRIL. 2004

7페이지


구       성 총 7 페이지수
다운로드[ RD06HHF1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
RD06HHF1

Silicon MOSFET Power Transistor

Mitsubishi Electric
Mitsubishi Electric

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵