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2SJ601 데이터시트 PDF




NEC에서 제조한 전자 부품 2SJ601은 전자 산업 및 응용 분야에서
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부품번호 2SJ601 기능
기능 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SJ601 데이터시트, 핀배열, 회로
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 31 mMAX. (VGS = –10 V, ID = –18 A)
RDS(on)2 = 46 mMAX. (VGS = –4.0 V, ID = –18 A)
Low Ciss: Ciss = 3300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ601
TO-251
2SJ601-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
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Gate to Source Voltage (VGS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 36
m 120
Total Power Dissipation (TC = 25°C) PT 65
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS –35
EAS 123
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 , VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14646EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000




2SJ601 pdf, 반도체, 판매, 대치품
2SJ601
www.DataSheet4U.com
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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M8E 00. 4

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