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2SJ603 데이터시트 PDF




NEC에서 제조한 전자 부품 2SJ603은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 2SJ603 기능
기능 MOS FIELD EFFECT TRANSISTOR
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2SJ603 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Super low on-state resistance:
RDS(on)1 = 48 mMAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 75 mMAX. (VGS = 4.0 V, ID = 13 A)
Low input capacitance:
Ciss = 1900 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 25
m 70
Total Power Dissipation (TC = 25°C) PT 50
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 25
EAS 62.5
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ603
2SJ603-S
TO-220AB
TO-262
2SJ603-ZJ
2SJ603-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan.
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14648EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001




2SJ603 pdf, 반도체, 판매, 대치품
2SJ603
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
1
TA = 55˚C
25˚C
75˚C
125˚C
VDS = 10 V
Pulsed
2 3 4 5
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
60 VGS = 10 V
40
20
00
4.5 V
4.0 V
Pulsed
1 2 3 4 5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
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10
1
0.1
0.01
0.01
TA = 125˚C
75˚C
25˚C
55˚C
VDS = 10 V
Pulsed
0.1
1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
80
60 ID = 25 A
13 A
5 A
40
20
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120 Pulsed
100
80
VGS = 4.0 V
60
4.5 V
10 V
40
20
0
0.1 1 10
ID - Drain Current - A
100
4.0
3.0
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
2.0
1.0
0
50
0
50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet D14648EJ3V0DS

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2SJ603 전자부품, 판매, 대치품
5 PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZJ)
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10 TYP.
4
4.8 MAX.
1.3±0.2
2SJ603
2) TO-262 (MP-25 Fin Cut)
10 TYP.
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4) TO-220SMD (MP-25Z) Note
10 TYP.
4
4.8 MAX.
1.3±0.2
123
1.4±0.2
0.7±0.2
2.54 TYP.
2.54 TYP0. .5R0T.8YRP.TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
123
1.4±0.2
0.75±0.3
2.54 TYP.
2.54 TYP0..50R.8TRYPT.YP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Note This package is produced only in Japan.
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D14648EJ3V0DS
7

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