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PDF 2SJ604 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ604 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ604
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ604 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A)
RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A)
• Low input capacitance:
Ciss = 3300 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 45
m 120
Total Power Dissipation (TC = 25°C) PT 70
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS −35
EAS 123
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ604
TO-220AB
2SJ604-S
TO-262
2SJ604-ZJ
2SJ604-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14649EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001
1 page  
2SJ604
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
Pulsed
50 VGS = –4.0 V
–4.5 V
40
–10 V
30
20
10
0
−50
0
ID = –23 A
50 100 150
Tch - Channel Temperature - ˚C
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10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
1000
Coss
100 Crss
10
–0.1
VGS = 0 V
f = 1 MHz
–1 –10 –100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
0.1 1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1000
Pulsed
–100
VGS = –10 V
–10 –4.0 V
–1
0V
–0.1
0
–0.5 –1.0
VSD - Source to Drain Voltage - V
–1.5
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
VDD = –30 V
VGS = –10 V
RG = 0 Ω
td(on)
tr
tf
1
–0.1 –1 –10 –100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
–12
ID = –45 A
–50 VDD = –48 V
–30 V
–40 –12 V
–10
VGS –8
–30 –6
–20 –4
–10
0
0
–2
VDS
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
Data Sheet D14649EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ604.PDF ] | |
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