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PDF 2SJ605 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ605 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A)
RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)
• Low input capacitance
! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
2SJ605-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
www.DataSheet4U.com Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
m 65
m 200
Total Power Dissipation (TC = 25°C)
PT 100
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS –45
EAS 203
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
! 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
2000
1 page  
2SJ605
www.DataSheet4U.com
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
Pulsed
40
VGS = –4.0 V
30
–4.5 V
–10 V
20
10
ID= –33A
0
−50 0
50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
100
–0.1
Coss
Crss
–1 –10
VDS - Drain to Source Voltage - V
–100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60 –12
ID = –65 A
–50 VDD = –48 V
–30 V
–40 –12 V
–10
VGS
–8
–30 –6
–20
–10 VDS
–4
–2
00
0 20 40 60 80 100
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1000 Pulsed
–100
VGS = –10 V
–10 –4 V
0V
–1
–0.1 0
–0.5 –1.0 –1.5
VSD - Source to Drain Voltage - V
–2.0
1000
100
SWITCHING CHARACTERISTICS
td(off)
VDD = –30 V
RG = 0 Ω
VGS = –10 V
td(on)
10
tr
tf
1
–0.1 –1 –10 –100
ID - Drain Current - A
–1000
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
–100 IAS = –45 A
–10
EAS = 203 mJ
VDD = –30 V
RG = 25 Ω
–1 VGS = –20 → 0 V
10 µ 100 µ
1m
L - Inductive Load - H
10 m
Data Sheet D14650EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ605.PDF ] | |
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