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PDF 2SJ632 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ632 | |
| Descripción | P CHANNEL MOS SILICON TRANSISTOR | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SJ632 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number : ENN7420
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
2SJ632
P-Channel Silicon MOSFET
2SJ632
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2062A
[2SJ632]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
(Bottom view)
0.75
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : PCP
www.DataSheet4U.com
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (250mm2!0.8mm)
Tc=25°C
Ratings
--60
±20
--2
--8
1.5
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : GA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--1A, VGS=--4V
min
--60
--1.2
1.6
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
2.4 S
275 360 mΩ
400 560 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32603 TS IM TA-3954 No.7420-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SJ632.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SJ630 | General-Purpose Switching Device Applications | Sanyo Semicon Device |
| 2SJ632 | P CHANNEL MOS SILICON TRANSISTOR | Sanyo Semicon Device |
| 2SJ633 | DC/DC Converter Applications | Sanyo Semicon Device |
| 2SJ634 | DC/ DC CONVERTER TRANSISTOR | Sanyo Semicon Device |
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