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PDF CPV364M4KPBF Data sheet ( Hoja de datos )
| Número de pieza | CPV364M4KPBF | |
| Descripción | IGBT SIP MODULE | |
| Fabricantes | International Rectifier | |
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Bulletin I-27256 09/06
CPV364M4KPbF
IGBT SIP MODULE
Short Circuit Rated UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for high
1
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10μs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
3 Q1
6 Q2
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
• Optimized for high operating frequency (over 5kHz)
• Totally Lead-Free and RoHs Compliant
7 13 19
Product Summary
Output Current in a Typical 20 kHz Motor Drive
11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Isolated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at
a premium.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current c
Clamped Inductive Load Current d
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
24
13
48
48
9.3
±20
2500
63
25
-55 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in ( 0.55-0.8 N•m)
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
2.2
3.7
–––
–––
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Units
V
A
μs
V
VRMS
W
°C
Units
°C/W
g (oz)
1
1 page  
3000
2500
2000
1500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
1000
500
0
1
Coes
Cres
10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
CPV364M4KPbF
20
VCC = 400V
I C = 13A
16
12
8
4
0
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.5 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
IC = 13A
1.0
10 RG = 1O0hΩm
VGE = 15V
VCC = 480V
1
IC = 26 A
IC = 13 A
IC = 6.5 A
0.5
0
10 20 30 40
RGRG, G, aGtaeteReRseissitsatnacnece(O( Ωhm))
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CPV364M4KPBF.PDF ] | |
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