|
|
Número de pieza | GI01N60 | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | GTM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GI01N60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Pb Free Plating Product
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
GI01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
8
1.6A
Description
The GI01N60 provide the designer with the best combination of fast switching.
The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-251
www.DataSheet4U.com
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current , VGS@10V
VGS
ID @TC=25
Continuous Drain Current , VGS@10V
Pulsed Drain Current1,
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600
20
1.6
1
6
39
0.31
13
1.6
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
3.2
110
Unit
/W
/W
GI01N60
Page: 1/5
1 page ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
www.DataSheet4U.com
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI01N60
Page: 5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet GI01N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
GI01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |