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PDF MSX02 Data sheet ( Hoja de datos )
| Número de pieza | MSX02 | |
| Descripción | (MSXxx) Custom SIlicon Pad Detectors | |
| Fabricantes | Micron | |
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Hay una vista previa y un enlace de descarga de MSX02 (archivo pdf) en la parte inferior de esta página. Total 69 Páginas | ||
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SILICON SENSOR OPTIONS
Window Type
The range of dead layer windows available with the in-house Varian 300 XP ion implanter are listed
below. Window types refer to the junction of a device, but can also be achieved on the ohmic side
upon request.
WINDOW TYPE
2
7
9
DEAD LAYER
0.5 µm
0.1 µm
0.05 µm
MINIMUM ENERGY THRESHOLD
Electron
Proton
4 KeV
70 KeV
1 KeV
10 KeV
300 eV
4 KeV
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Metal Coverage
The standard metallisation scheme is 100 % sputtered aluminium of thickness 0.5 µm for good ultra
sonic wire bonding connections. The coverage of the metal over the active area can be suited to the
sensors application and to compliment the dead layer of the implant.
METAL
COVERAGE
M
G
P
T
D
DESCRIPTION
A continuous metal coverage of standard thickness over the whole active
area regions.
Grid coverage, typically 3 %, of standard thickness metallisation over the
whole active area and contact pads for wire bonding.
A periphery metal band, typically 30 µm wide, around the edge of the active
areas and contact pads for wire bonding. The majority of the active area
metal coverage free.
A standard periphery coverage, as described above, for good electrical
contact, and a thin metal coverage typically 0.1 -0.3 µm over the majority of
the active area.
A double metal process used to track readout signal in a direction different
to the active area elements.
The metal coverage refers to the junction side, but can also be achieved on the ohmic side upon
request. The evaporated metal system Ti/Ni/Au is also available on request. Gold ohmic contacts are
used for high operating temperature detectors +55o to +120o required for military applications.
5
5 Page 
DESIGN MSPSD DUO SERIES
CUSTOM SILICON DUO-LATERAL POSITION SENSITIVE DETECTORS
SILICON DETECTOR TYPE: DOUBLE SIDED SINGLE AREA POSITION SENSITIVE DETECTOR
DESIGN:
A double sided p-on-n silicon structure with highly uniform resistive junction
and ohmic layers and equipotential channels. The readout between two anodes is
orthogonal with respect to the readout between the two cathodes.
The MSPSD DL 04-300 Assembly for the
FAUST Upgrade Experiment.
MSPSD DL 050 ceramic assembly
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DOUBLE SIDED MSPSD DUO SERIES:
DESIGN
MSPSD DL 010
MSPSD DL 011
MSPSD DL 030
MSPSD DL 031
MSPSD DL 050
MSPSD DL 051
MSPSD DL 03
MSPSD DL 0311
MSPSD DL 04
MSPSD DL 63
ACTIVE
AREA
DIMENSION
(mm2)
1.0 x 1.0
1.0 x 1.0
3.0 x 3.0
3.0 x 3.0
5.0 x 5.0
5.0 x 5.0
10.0 x 10.0
10.0 x 10.0
20.0 x 20.0
63.0 x 63.0
CHIP
DIMENSIONS
(mm2)
3.0 x 3.0
15.356 x 15.356
5.0 x 5.0
15.356 x 15.356
7.0 x 7.0
15.356 x 15.356
12.0 x 12.0
15.356 x 15.356
21.0 x 23.0
66.0 x 66.0
GUARD
RING
DESIGN
SGR
SGR
SGR
SGR
SGR
SGR
SGR
SGR
SGR
MGR
WAFER
SIZE
(inch)
4
4
4
4
4
4
4
4
4
4
PACKAGE
Chip Only
Ceramic
Chip Only
Ceramic
Chip Only
Ceramic
Chip Only
Ceramic
Standard FR4
Chip Only
ENVIRONMENTAL TESTING
OPTIONS:
Space qualified, military, industrial, research, physics projects.
QUALITY ASSURANCE: ISO9001
11
11 Page | ||
| Páginas | Total 69 Páginas | |
| PDF Descargar | [ Datasheet MSX02.PDF ] | |
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