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부품번호 | MSX35 기능 |
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기능 | (MSXxx) Custom SIlicon Pad Detectors | ||
제조업체 | Micron | ||
로고 | |||
전체 30 페이지수
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INTRODUCTION
MICRON SEMICONDUCTOR PHYSICS 2007
Micron Semiconductor Ltd has developed the
most extensive custom range of AC and DC
detectors in the world over the past 20 years. In
2006 more than 20 new detectors, including
pixels, microstrips, duo and tetra-lateral devices
were designed, several of which are now
available in the 2007 catalogue.
Many of our most popular designs used in
radioactive beam, nuclear and space physics
have been developed further with a variety of
implant windows, metal coverage and
packaging options for minimizing dead layers
and closer spacing between detector assemblies.
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2006 saw Micron Semiconductor’s most
extensive contribution to space physics,
delivering over 100 fully space qualified
assemblies to worldwide institutes and space
agencies. The NASA’s STEREO mission, to
observe 3D images of the sun, is ready to
launch Micron’s thinnest space qualified
devices, the single sided MSA003/016-15 µm.
The development of thin silicon devices
continues with projects to delivery single sided
ultra thin silicon less than 10 um and double
sided large area super thin microstrip detectors
less than 40 um thick.
Micron continues to provide a full in-house
processing capability for 4 and 6-inch silicon
wafer technology. The standard thickness range
for 4-inch wafers is 40 – 1500 µm and on 6-inch
wafers it is 150 – 1000 µm, other thicknesses are
available as non-standard. There are also
projects studying different silicon materials
including NTD, MCZ and p-type for future high
energy physics experiments.
Laser cutting is in full production for
computerized dicing irregular detector shapes,
boring small diameter holes and achieving
minimum damage to silicon devices edges.
4
4페이지 DESIGN MSA SERIES
CUSTOM SILICON ANNULAR DETECTORS
SILICON DETECTOR TYPE: SINGLE SIDED DC Annular detectors
DESIGN:
Totally depleted ion implanted structures.
MSA 002/020-1000 µm
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MSA 003/016-15 µm Front & Rear View
MSA127 assembly supplied to TR SAXS Project at Argonne National Lab.
DESIGN
ACTIVE AREA DIAMETER
(mm)
CHIP
DIMENSIONS
Element 1
MSA002/020
Active Area Diameter = 8.0 mm
Element 2
Active Area Diameter = 20.0 mm
No Annuli
=2
24.0 mm
Flat-to-Flat
No Sides = 16
Annular Separation = 40 µm
Element 1
MSA003/016
Active Area Diameter = 7.0 mm
Element 2/3
Active Area Diameter = 16.0 mm
No Annuli
=2
18.15 mm
Flat-to-Flat
No Sides = 8
Annular Separation = 50 µm
Active Area Diameter = 67.236 mm
No Annuli
= 127
136.472 mm
MSA127 Annular Pitch
= Variable Flat-to-Flat
Annular Separation = 50 µm
No Sides = 24
Hole Diameter = 9.8 mm
*Available as optical or nuclear devices
WINDOW METAL
TYPE COVERAGE
2, 7, 9
M
2, 7, 9
M
2M
WAFER
SIZE
(inch)
4
4
6
ENVIRONMENTAL TESTING Space qualified, military, industrial, research, physics projects
OPTIONS:
EXPERIEMENT:
Caltech:-STEREO, Argonne National Lab:- TR SAXS
GUARD
RING PACKAGE
DESIGN
MGR
Chip
Only
MGR
Chip
Only
Ceramic
MGR Flip Chip
Mounted
QUALITY ASSURANCE: ISO9001
7
7페이지 | |||
구 성 | 총 30 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MSX30 | (MSX20 - MSX60) BP Solar PV Panels | Omni |
MSX35 | (MSXxx) Custom SIlicon Pad Detectors | Micron |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |