Datasheet.kr   

MSX35 데이터시트 PDF




Micron에서 제조한 전자 부품 MSX35은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MSX35 자료 제공

부품번호 MSX35 기능
기능 (MSXxx) Custom SIlicon Pad Detectors
제조업체 Micron
로고 Micron 로고


MSX35 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 30 페이지수

미리보기를 사용할 수 없습니다

MSX35 데이터시트, 핀배열, 회로
www.DataSheet4U.com




MSX35 pdf, 반도체, 판매, 대치품
INTRODUCTION
MICRON SEMICONDUCTOR PHYSICS 2007
Micron Semiconductor Ltd has developed the
most extensive custom range of AC and DC
detectors in the world over the past 20 years. In
2006 more than 20 new detectors, including
pixels, microstrips, duo and tetra-lateral devices
were designed, several of which are now
available in the 2007 catalogue.
Many of our most popular designs used in
radioactive beam, nuclear and space physics
have been developed further with a variety of
implant windows, metal coverage and
packaging options for minimizing dead layers
and closer spacing between detector assemblies.
www.DataSheet4U.com
2006 saw Micron Semiconductor’s most
extensive contribution to space physics,
delivering over 100 fully space qualified
assemblies to worldwide institutes and space
agencies. The NASA’s STEREO mission, to
observe 3D images of the sun, is ready to
launch Micron’s thinnest space qualified
devices, the single sided MSA003/016-15 µm.
The development of thin silicon devices
continues with projects to delivery single sided
ultra thin silicon less than 10 um and double
sided large area super thin microstrip detectors
less than 40 um thick.
Micron continues to provide a full in-house
processing capability for 4 and 6-inch silicon
wafer technology. The standard thickness range
for 4-inch wafers is 40 – 1500 µm and on 6-inch
wafers it is 150 – 1000 µm, other thicknesses are
available as non-standard. There are also
projects studying different silicon materials
including NTD, MCZ and p-type for future high
energy physics experiments.
Laser cutting is in full production for
computerized dicing irregular detector shapes,
boring small diameter holes and achieving
minimum damage to silicon devices edges.
4

4페이지










MSX35 전자부품, 판매, 대치품
DESIGN MSA SERIES
CUSTOM SILICON ANNULAR DETECTORS
SILICON DETECTOR TYPE: SINGLE SIDED DC Annular detectors
DESIGN:
Totally depleted ion implanted structures.
MSA 002/020-1000 µm
www.DataSheet4U.com
MSA 003/016-15 µm Front & Rear View
MSA127 assembly supplied to TR SAXS Project at Argonne National Lab.
DESIGN
ACTIVE AREA DIAMETER
(mm)
CHIP
DIMENSIONS
Element 1
MSA002/020
Active Area Diameter = 8.0 mm
Element 2
Active Area Diameter = 20.0 mm
No Annuli
=2
24.0 mm
Flat-to-Flat
No Sides = 16
Annular Separation = 40 µm
Element 1
MSA003/016
Active Area Diameter = 7.0 mm
Element 2/3
Active Area Diameter = 16.0 mm
No Annuli
=2
18.15 mm
Flat-to-Flat
No Sides = 8
Annular Separation = 50 µm
Active Area Diameter = 67.236 mm
No Annuli
= 127
136.472 mm
MSA127 Annular Pitch
= Variable Flat-to-Flat
Annular Separation = 50 µm
No Sides = 24
Hole Diameter = 9.8 mm
*Available as optical or nuclear devices
WINDOW METAL
TYPE COVERAGE
2, 7, 9
M
2, 7, 9
M
2M
WAFER
SIZE
(inch)
4
4
6
ENVIRONMENTAL TESTING Space qualified, military, industrial, research, physics projects
OPTIONS:
EXPERIEMENT:
Caltech:-STEREO, Argonne National Lab:- TR SAXS
GUARD
RING PACKAGE
DESIGN
MGR
Chip
Only
MGR
Chip
Only
Ceramic
MGR Flip Chip
Mounted
QUALITY ASSURANCE: ISO9001
7

7페이지


구       성 총 30 페이지수
다운로드[ MSX35.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MSX30

(MSX20 - MSX60) BP Solar PV Panels

Omni
Omni
MSX35

(MSXxx) Custom SIlicon Pad Detectors

Micron
Micron

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵