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What is HAT3021R?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N/P Channel Power MOS FET Power Switching".


HAT3021R Datasheet PDF - Renesas Technology

Part Number HAT3021R
Description Silicon N/P Channel Power MOS FET Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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Total 11 Pages



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HAT3021R
Silicon N/P Channel Power MOS FET
Power Switching
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
78
DD
24
GG
S1
Nch
56
DD
S3
Pch
8 7 65
1 234
REJ03G0415-0200
Rev.2.00
Oct.06.2004
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Nch Pch
Drain to source voltage
VDSS
80 –80
Gate to source voltage
VGSS
±20 ±20
Drain current
Drain peak current
ID
ID(pulse)Note1
3.4
20.4
–2.6
–15.6
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
3.4
1.5
–2.6
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00, Oct.06.2004, page 1 of 10

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HAT3021R equivalent
HAT3021R
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200 ID = 0.5 A, 1 A, 2 A
150
VGS = 4.5 V
100
0.5 A, 1 A, 2 A
50 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
13
10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 3.4 A
20
80
60 VDS
40
VDD = 50 V
25 V
10 V
VGS 16
12
8
20
VDD = 50 V
4
25 V
10 V
0
0 2 4 6 8 10
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
10 Tc = –25°C
3
1
0.3 25°C
0.1
75°C
0.03
0.01
0.01
VDS = 10 V
Pulse Test
0.03 0.1 0.3 1 3 10
Drain Current ID (A)
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
100
50 Coss
20
10
5
2
VGS = 0
f = 1 MHz
Crss
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
50 td(off)
20 tf
10
5
tr
td(on)
2 VGS = 10 V, VDD = 30 V
Rg = 4.7 , duty 1 %
1
0.1 0.2 0.5 1 2
Drain Current ID
5
(A)
10
Rev.2.00, Oct.06.2004, page 5 of 10


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAT3021R electronic component.


Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HAT3021RThe function is Silicon N/P Channel Power MOS FET Power Switching. Renesas TechnologyRenesas Technology

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