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GM5510 데이터시트 PDF




Gamma Microelectronics에서 제조한 전자 부품 GM5510은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 GM5510 자료 제공

부품번호 GM5510 기능
기능 STANDARD VOLTAGE DETECTORS
제조업체 Gamma Microelectronics
로고 Gamma Microelectronics 로고


GM5510 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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GM5510 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Description
The GM5510 series are highly precise, and low power con-
sumption voltage detectors. Detect voltage is extremely ac-
curate with minimal temperature drift. Both CMOS and N
channel open drain output configurations are available.
Application
Computers
Controllers
Intelligent Instruments
Critical µP and uC Power Monitoring
Portable/ Battery- Powered Equipment
Automotive
Features
Highly accurate: ± 2%
Low power consumption: TYP 0.7µA
[VIN = 1.5V]
Detect voltage range: 1.6V to 6.0V in 0.1V
increments
Operating voltage range: 0.7 to 10.0V
Detect voltage temperature characteristic:
TYP ± 100 ppm/ °C
Output Configuration: CMOS or N channel
open drain
TYPICAL APPLICATION CIRCUITS
GM5510C
VIN
GM5510N
VIN
R 100kW
VIN
VOUT
VIN
VOUT
VSS
VSS
CMOS Output
N-ch Open Drain Output
www.gammamicro.com 1




GM5510 pdf, 반도체, 판매, 대치품
BLOCK DIAGRAM
(1) CMOS Output
VIN
+
-
Vref
(2) Nch Open Drain Output
VIN
VOUT
VSS
+
-
Vref
VOUT
VSS
ELECTRICAL CHARACTERISTICS [VDF (T) = 1.6 to 6.0V ± 2%]
PARAMETER
Detect Voltage
Hysteresis Range
Supply Current
Operating Voltage
Output Current
SYMBOL
CONDITIONS
TA = 25°C
MIN
TYP
MAX UNIT CIRCUIT
VDF
VHYS
ISS
VIN
VDF X 0.98 VDF VDF X 1.02
VDF X 0.02 VDF X 0.05 VDF X 0.08
VIN = 1.5V
0.7 2.3
VIN = 2.0V
0.8 2.7
VIN = 3.0V
0.9 3.0
VIN = 4.0V
1.0 3.2
VIN = 5.0V
1.1 3.6
VDF(T) = 1.6V to 6.0V
0.7
10.0
Nch VDS = 0.5V
V
V
µA
V
1
1
2
1
IOUT
VIN = 1.0V
VIN = 2.0V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
Pch VDS = 2.1V
VIN = 8.0V
(with CMOS output)
1.0
3.0
5.0
6.0
7.0
2.2
7.7
10.1
11.5
13.0
-10.0
3
mA
-2.0 4
Temperature
Characteristics
DVDF
DTopr -VDF
-40°C Topr 85°C
± 100
ppm/ °C -
Delay Time
(VDR"VOUT inversion)
tDLY
0.2 mS 5
Note:
2VDF (T): Established Detect Voltage Value
Release Voltage: VDR = VDF + VHYS
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GM5510 전자부품, 판매, 대치품
Notes on Use
1. When a resistor is connected between the VIN pin and the input with CMOS output configurations, oscillation may
occur as a result of voltage drops at RIN if load current (IOUT) exists.
(Refer to N.B 1- (1) below)
2. When a resistor is connected between the VIN pin and the input with CMOS output configurations, irrespective of
Nch output configurations, oscillation may occur as a result of through current at the time of voltage release even if
load current (IOUT) does not exist.
(Refer to N.B 1- (2) below)
3. With a resistor connected between the VIN pin and the input, detect and release voltage will rise as a result of the
IC's supply current flowing through the VIN pin.
4. In order to stabilise the IC's operations, please ensure that VIN pin's input frequency's rise and fall times are more
than several µ sec/ V.
RIN
GM5510N
VIN VOUT
VSS
C
Diagram: Circuit using an input resistor
N. B.
1. Oscillation
(1) Output current oscillation with the CMOS output configuration
When the voltage applied at IN rises, release operations commence and the detector's output voltage increases.
Load current (IOUT) will flow at RL. Because a voltage drop (RIN x IOUT) is produced at the RIN resistor, located
between the input (IN) and the VIN pin, the load current will flow via the IC's VIN pin. The voltage drop will also
lead to a fall in the voltage level at the VIN pin. When the VIN pin voltage level falls below the detect voltage level,
detect operations will commence. Following detect operations, load current flow will cease and since voltage drop at
RIN will disappear, the voltage level at the VIN pin will rise and release operations will begin over again.
Oscillation may occur with this "release" repetition.
Further, this condition will also appear via means of a similar mechanism during detect operations.
(2) Oscillation as a result of through current
Since the GM5510 series are CMOS IC's, through current will flow when the IC's internal circuit switching operates
(during release and detect operations). Consequently, oscillation is liable to occur as a result of drops in voltage at the
through current's resistor (RIN) during release voltage operations. (Refer to diagram2)
Since hysteresis exists during detect operations, oscillation is unlikely to occur.
Input
Input
RIN
RIN X IOUT
Voltage drop
GM5510C
VIN VOUT
VSS
RIN
IOUT
RIN X ISS*
Voltage drop
GM5510N
GM5510C
VIN VOUT
VSS
ISS*
(Includes through current)
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