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BD9882FV 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BD9882FV은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BD9882FV 기능
기능 DC-AC Inverter Control IC
제조업체 ROHM Semiconductor
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BD9882FV 데이터시트, 핀배열, 회로
STRUCTURE
NAME OF PRODUCT
TYPE
Silicon Monolithic Integrated Circuit
DC-AC Inverter Control IC
BD9882F, BD9882FV
1/4
FUNCTION
・1ch control with Push-Pull
・Lamp current and voltage sense feed back control
・Sequencing easily achieved with Soft Start Control
・Short circuit protection with Timer Latch
・Under Voltage Lock Out
・Short circuit protection with over voltage
・Mode-selectable the operating or stand-by mode by stand-by pin
・Synchronous operating the other BD9882F or BD9882FV IC’s
・BURST mode controlled by PWM and DC input
○Absolute Maximum Ratings(Ta = 25℃)
Parameter
Supply Voltage
Operating Temperature Range
Storage Temperature Range
Power Dissipation
Maximum Junction Temperature
Symbol
VCC
Topr
Tstg
Pd
Tjmax
Limits
15
-40~+95
-55~+125
550*1(BD9882F)
650*2(BD9882FV)
+125
Unit
V
mW
*1Pd derate at 5.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
*2Pd derate at 6.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
〇Recommended operating condition
Parameter
Supply voltage
CT oscillation frequency
BCT oscillation frequency
Symbol
Vcc
fCT
fBCT
Limits
5.0~14.0
20~150
0.10~0.50
Unit
V
kHz
kHz
Status of this document
The Japanese language version of this document shall be the official specification.
Any translation of this document shall be for reference only.
REV. A




BD9882FV pdf, 반도체, 판매, 대치품
4/4
NOTE FOR USE
1. When designing the external circuit, including adequate margins for variation between external devices and the IC.Use
adequate margins for steady state and transient characteristics.
2. Recommended Operating Range
The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within
recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages
in the operating ranges, however, the variation will be small.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin
6. The BD9882F and BD9882FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit
(TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect
the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an
environment where the operation of the thermal shutdown circuit is assumed.
7. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly
shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such
as a fuse, need to be considered when using a device beyond its maximum ratings.
8.About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching.
Make sure to leave adequate margin for this IC variation.
9. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch.
10. By STB voltage, BD9882F and BD9882FV are changed to 2 states. Therefore, do not input STB pin voltage between one
state and the other state (0.8~1.8V).
11.The pin connected a connector need to connect to the resistor for electrical surge destruction.
12.This IC is a monolithic IC which (as shown is Fig-1)has P+ substrate and between the various pins. A P-N junction
is formed from this P layer of each pin. For example, the relation between each potential is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in
mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not
use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate)
voltage to an input pin.
Resistance
(PinA)
P
P
N
P
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
C
E
N
GND
N
P substrate
GND
Parasitic diode
N
(PinB)
(PinA)
Parasitic diode
B C
E
GND
GND
Other adjacent components Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
REV. A

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관련 데이터시트

부품번호상세설명 및 기능제조사
BD9882F

DC-AC Inverter Control IC

ROHM Semiconductor
ROHM Semiconductor
BD9882FV

DC-AC Inverter Control IC

ROHM Semiconductor
ROHM Semiconductor

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