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PDF AWM6432 Data sheet ( Hoja de datos )

Número de pieza AWM6432
Descripción WiMAX 802.16 Power Amplifiers
Fabricantes Anadigics 
Logotipo Anadigics Logotipo



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AWM6432
3.3-3.6 GHz WiMAX PowerAmplifierModule
PRELIMINARY DATA SHEET- Rev 1.1
FEATURES
• 26.5 dB Gain
• +24 dBm Linear Output Power
• 2.3 % EVM (OFDM Modulation)
• +5 V to +6 V Supply
• High Efficiency
• Integrated Step Attenuator
• Integrated Output Power Detector
• 50Matched RF Ports
• RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
AWM6432
APPLICATIONS
• WiMAX tranceivers that support the IEEE
802.16-2004 and ETSI EN301-021 standards
• Broadband Wireless Applications (BWA)
PRODUCT DESCRIPTION
The ANADIGICS AWM6432 WiMAX Power Amplifier
is a high performance device that delivers
exceptional linearity and efficiency at high levels of
output power. Designed to operate in the 3.5 GHz
band, it supports the IEEE 802.16-2004 and ETSI
EN301-021 wireless standards.
The device requires only a single +5 V to +6 V supply
and a low-current reference input. An integrated
detector can be used to monitor output power, and
an integrated 20 dB step attenuator enables gain
M18 Package
12 Pin 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
control. No external circuits are required for biasing
or RF impedance matching, thus reducing external
component costs and facilitating circuit board
designs.
The AWM6432 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability and ruggedness. It
is optimized for use in a 50 system, and is offered
in a 4.5 mm x 4.5 mm x 1.4 mm surface mount
module.
Supply
Voltage
Supply
Voltage
RF Input
Step
Attenuator
Bias
Control
Matching
Network
Power
Detector
RF Output
Attenuator
Control
Bias
Voltage
Detector
Ouput
Ground
Figure 1: Functional Block Diagram
11/2006

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PERFORMANCE DATA
AWM6432
Figure 3: Gain vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
f = 3.5 GHz, 54 Mbps OFDM Modulation)
31.0
30.5
30.0
29.5
29.0
28.5
28.0
27.5
27.0
26.5
26.0
14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
26
Figure 5: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps
OFDM Modulation, system EVM Approx. 0.8 %)
7
Frequency
6 3.30 GHz
3.40 GHz
3.50 GHz
5 3.60 GHz
4
3
2
1
0
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Figure 4: Gain vs. Frequency
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
POUT = +24 dBm, 54 Mbps OFDM Modulation)
31.0
30.5
30.0
29.5
29.0
28.5
28.0
27.5
27.0
26.5
26.0
3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
Frequency (GHz)
Figure 6: Uncorrected EVM vs. Frequency
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps
OFDM Modulation, system EVM Approx. 0.8 %)
7
Output Power
+24 dBm
6 +23 dBm
+22 dBm
5
4
3
2
1
0
3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
Frequency (GHz)
Figure 7: Detector Voltage vs. Output Power
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
f = 3.5 GHz, 54 Mbps OFDM Modulation)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Figure 8: Detector Voltage vs. Frequency
(TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V,
54 Mbps OFDM Modulation)
3.5
Output Power
3.0 +24 dBm +21 dBm
+18 dBm +15 dBm
2.5
2.0
1.5
1.0
0.5
0.0
3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
Frequency (GHz)
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
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NOTES
AWM6432
PRELIMINARY DATA SHEET - Rev 1.1
11/2006
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