Datasheet.kr   

DWEP69-12 데이터시트 PDF




IXYS Corporation에서 제조한 전자 부품 DWEP69-12은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 DWEP69-12 자료 제공

부품번호 DWEP69-12 기능
기능 Rectifier Diodes & FRED
제조업체 IXYS Corporation
로고 IXYS Corporation 로고


DWEP69-12 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 23 페이지수

미리보기를 사용할 수 없습니다

DWEP69-12 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Contents
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
FRED, Rectifier Diode and Thyristor Chips in Planar Design
IGBT Chips
G-Series, Low VCE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
VCES
600 ...1200 V
600 V
600 V
1200 ... 1700 V
IC
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
MOSFET Chips
HiPerFETTM Power MOSFET
PolarHTTM MOSFET, very Low RDS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
Layouts
VDSS
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
RDS(on)
0.005 ... 4.5
0.015 ... 0.135
0.06 ... 1.2
30 ... 110
Bipolar Chips
Rectifier Diodes
FREDs
Low Leakage FREDs
SONIC-FRDTM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
VRRM / VDRM
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
800 ... 2200 V
1600 ... 1800 V
I / IF(AV)M T(AV)M
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
DCB Specification
Page
2
2
3
4
5
6
6
6
7
8-10
11
12
12
13-17
18-19
20-21
22-23
24-25
26-27
28-31
32-33
34
35
36
IXYS reserves the right to change limits, test conditions and dimensions
1




DWEP69-12 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
Assembly Instructions
MOS/IGBT Chips
Recommended Solder System
IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach
temperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT.
Wire Bonding
It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple
wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire
bonds. At smaller gate pads 0.15 mm is recommended.
Thermal Response Testing
To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed.
Bipolar Chips
Assembling
IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either
the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for
soldering is pure silver.
Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason
they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on
Page 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal.
Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal
fatigue.
Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than five
minutes.
As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips.
This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids.
A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 %
Hydrogen in Nitrogen.
Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and
temperature shocks above 930°F/min (500 K/min) are avoided.
We do not recommend the use of fluxes for soldering!
Ultrasonic Wire Bonding
Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be used
dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to
soldered chips.
Coating
Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material
that is in contact with the chip surface must have the following properties:
- elasticity (to prevent mechanical stress)
- high purity, no contamination with alkali metals
- good adhesion to metals and glass passivation.
4 © 2004 IXYS All rights reserved

4페이지










DWEP69-12 전자부품, 판매, 대치품
Rectifier Diodes
Type
DWN 5
DWP 5
DWN 2
DWN 9
DWN 17
DWP 17
DWN 21
DWP 21
DWN 35
DWP 35
DWN 50
DWP 50
DWN 75
DWP 75
DWN 110
DWP 110
DWN 340
DWN 108
DWN 347
Tolerance
Chips
per
Wafer
Dimensions
AB
mm mm
Si-
thickn.
mm
1123 4.40 2.10 0.265
716 4.40 2.10 0.265
••
••
••
••
••
••
1204
684
518
518
346
346
259
259
198
198
125
125
58
58
32
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
12.30
12.30
16.20
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
12.30
12.30
16.20
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
••
58 12.30 12.30
16 25.30 18.50
-0.1 -0.1
0.315
0.315
±5%
DWN
DWP
© 2004 IXYS All rights reserved
19

7페이지


구       성 총 23 페이지수
다운로드[ DWEP69-12.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
DWEP69-12

Rectifier Diodes & FRED

IXYS Corporation
IXYS Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵