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PDF DWEPxx-xx Data sheet ( Hoja de datos )
| Número de pieza | DWEPxx-xx | |
| Descripción | Rectifier Diodes & FRED | |
| Fabricantes | IXYS Corporation | |
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Contents
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
FRED, Rectifier Diode and Thyristor Chips in Planar Design
IGBT Chips
G-Series, Low VCE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
VCES
600 ...1200 V
600 V
600 V
1200 ... 1700 V
IC
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
MOSFET Chips
HiPerFETTM Power MOSFET
PolarHTTM MOSFET, very Low RDS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
Layouts
VDSS
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
RDS(on)
0.005 ... 4.5 Ω
0.015 ... 0.135 Ω
0.06 ... 1.2 Ω
30 ... 110 Ω
Bipolar Chips
Rectifier Diodes
FREDs
Low Leakage FREDs
SONIC-FRDTM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
VRRM / VDRM
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
800 ... 2200 V
1600 ... 1800 V
I / IF(AV)M T(AV)M
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
DCB Specification
Page
2
2
3
4
5
6
6
6
7
8-10
11
12
12
13-17
18-19
20-21
22-23
24-25
26-27
28-31
32-33
34
35
36
IXYS reserves the right to change limits, test conditions and dimensions
1
1 page  
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FRED, Rectifier Diode and Thyristor Chips in Planar Design
Fast Recovery Epitaxial Diodes (FRED)
Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses,
is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1.
The reverse current character-istic following the peak reverse current IRM is
another very im-portant property. The slope of the decaying reverse current
dirr/dt results from design para- meters (technology and dif-fusion of the
FRED chip Fig. 2. In a circuit this current slope, in conjunction with parasitic
induc-tances (e.g. connecting leads, causes over-voltage spikes and high
frequency interference vol-tages.The higher the dirr/dt ("hard recovery" or
"snap-off" behavior) the higher is the resulting additional stress for both the
diode and the paralleled switch. A slow decay of the reverse current ("soft
recovery" behavior), is the most desirable characteristic, and this is designed
into all FRED. The wide range of available blocking voltages makes it
possible to apply these FRED as output rectifiers in switch-mode power
supplies (SMPS) as well as protective and free-wheeling diodes for power
switches in inverters and welding power supplies.
Fig. 1: Current and voltage during turn-on and
turn-off switching of fast diodes
Rectifier Diode and Thyristor Chips
The figures 3 a-c show cross sectional views of the diode and thyristor
chips in the passivation area. All thyristor and diode chips (DWN, DWFN,
CWP) are fabricated using separation diffusion processes so that all
junctions terminate on the topside of the chip. Now the entire bottom
surfaces of all chips are available for soldering onto a DCB or other ceramic
substrate without a molybdenum strain buffer. The elimination of the strain
buffer and its solder joint reduces thermal resistance and increases
blocking voltage stability. The junction termination areas are passivated
with glass, whose thermal expansion coefficient matches that of silicon. All
silicon chips increasingly use planar technology with guard rings and
channel stoppers to reduce electric fields on the chip surface.
The contact areas of the chips have vapor deposited metal layers which
contribute substantially to their high power cycle capability. All chips are
processed on silicon wafers of 5" diameter and diced after a wafer sample
test which auto-matically marks chips not meeting the electrical specification.
The chip geometry is square or rectangular.
AnA noo dde e
Glasspassivation
Guard ring
EpiEtpaitaxxyie Slachyichet rn-n-
SuSbusbsttrraat nte+ n+
KCatahotdhe ode
Metalization
Fig. 2: Cross section of glassivated planar epitaxial
diode chip with seperation diffusion (type DWEP)
Fig. 3a-c
Cross sections of Chips in the passivation area
a) Diode chip, type DWN, DWFN
b) Diode chip, type DWP, DWFP
c) Thyristor chip, type CWP
Glasspassivation
Fig. 3a)
Metalization
IXYS reserves the right to change limits, test conditions and dimensions
Fig. 3b)
Guard ring Glasspassivation
p
n
n+
Metalization
Emitter
Fig. 3c)
Glasspassivation
Guard ring Channel-
stopper
Metalization
5
5 Page 
Low Leakage Fast Recovery Epitaxial Diodes
Type
Chips
per
Wafer
Dimensions
AB
mm mm
Si-
thickn.
mm
DWLP 4-02
DWLP 15-02
DWLP 15-02B
DWLP 25-02
• 1960 3.00 1.80
• 990 3.25 3.25
• 990 3.25 3.25
• 518 4.45 4.45
0.37
0.37
0.37
0.37
DWLP 4-03
•
DWLP 8-03
•
DWLP 15-03
•
DWLP 15-03A
•
DWLP 23-03
•
DWLP 23-03A
•
DWLP 55-03
••
DWLP 75-03
•
1960
1612
990
990
531
531
230
151
3.00
3.60
3.25
3.25
5.50
5.50
8.65
8.91
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
DWLP 8-04
•
DWLP 15-04
•
DWLP 23-04
•
DWLP 55-04
••
DWLP 75-04
••
DWLP 150-04 • •
1612
990
531
230
151
74
3.60
3.25
5.50
8.65
8.91
13.00
1.80
3.25
3.50
4.95
7.22
9.77
0.38
0.38
0.38
0.38
0.38
0.38
DWLP 4-06
•
DWLP 8-06A
•
DWLP 8-06B
•
DWLP 15-06A
•
DWLP 15-06B
•
DWLP 23-06A
•
DWLP 23-06B
•
DWLP 55-06
••
DWLP 75-06
••
1960
1612
1612
990
990
531
531
230
151
3.00
3.60
3.60
3.25
3.25
5.50
5.50
8.65
8.91
1.80
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
DWLP 8-12
DWLP 15-12
DWLP 23-12
DWLP 55-12
DWLP 75-12
•
•
•
••
•
1612
990
531
230
151
3.60
3.25
5.50
8.65
8.91
1.80
3.25
3.50
4.95
7.22
0.46
0.46
0.46
0.46
0.46
Tolerance
-0.1 -0.1
±5%
© 2004 IXYS All rights reserved
23
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| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet DWEPxx-xx.PDF ] | |
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