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PDF BU52012HFV Data sheet ( Hoja de datos )

Número de pieza BU52012HFV
Descripción Unipolar Detection Hall ICs
Fabricantes ROHM Semiconductor 
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Hall ICs
Unipolar Detection
Hall ICs
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
No.10045ECT03
Description
The unipolar Detection Hall IC detects only either the N pole or S pole.
The output turns ON (active Low) upon detection.
Features
1) Unipolar detection
2) Micropower operation (small current using intermittent operation method)
3) Ultra-compact CSP4 package (BU52002GUL, BU52003GUL)
4) Ultra- Small outline package (BU52012NVX)
5) Small outline package (BU52012HFV, BU52013HFV)
6) Line up of supply voltage
For 1.8V Power supply voltage (BU52012NVX, BU52012HFV, BU52013HFV)
For 3.0V Power supply voltage (BU52002GUL, BU52003GUL)
7) High ESD resistance 8kV(HBM)
Applications
Mobile phones, notebook computers, digital video camera, digital still camera, etc.
Lineup matrix
Function Product name
Supply
voltage
(V)
Operate
point
(mT)
Hysteresis
(mT)
Period
(ms)
BU52002GUL 2.403.30 3.7
0.8
50
S pole BU52012NVX 1.653.60
BU52012HFV 1.653.30
3.0
3.0
0.9
0.9
50
50
BU52003GUL
N pole
BU52013HFV
2.403.30
1.653.30
-3.7
-3.0
Plus is expressed on the S-pole; minus on the N-pole
0.8
0.9
50
50
Supply
current
(AVG.)
(µA)
6.5
Output type
CMOS
Package
VCSP50L1
3.5 COMS SSON004X1216
3.5 CMOS HVSOF5
6.5
CMOS
VCSP50L1
3.5 CMOS HVSOF5
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/19
2010.08 - Rev.C

1 page




BU52012HFV pdf
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
Technical Note
BU52012HFV (Unless otherwise specified, VDD=1.80V, Ta=25)
Parameter
Symbol
Min.
Limits
Typ.
Max.
Power Supply Voltage
VDD 1.65 1.80 3.30
Unit
V
Conditions
Operate Point
BopS - 3.0 5.0 mT
Release Point
BrpS 0.6 2.1
- mT
Hysteresis
BhysS
-
0.9
- mT
Period
Output High Voltage
Output Low Voltage
Supply Current 1
TP -
VOH VDD-0.2
VOL -
IDD1(AVG)
-
50
-
-
3.5
100 ms
-
V
B<BrpS
IOUT =-0.5mA
0.2
V
BopS<B
IOUT =+0.5mA
10
10
5.5 µA VDD=1.8V, Average
Supply Current
During Startup Time 1
Supply Current
During Standby Time 1
IDD1(EN)
-
2.8
-
mA
VDD=1.8V,
During Startup Time Value
IDD1(DIS)
-
1.8
-
µA
VDD=1.8V,
During Standby Time Value
Supply Current 2
IDD2(AVG)
-
6.5
9 µA VDD=2.7V, Average
Supply Current
During Startup Time 2
IDD2(EN)
-
4.5
-
mA
VDD=2.7V,
During Startup Time Value
Supply Current
During Standby Time 2
IDD2(DIS)
-
4.0
-
µA
VDD=2.7V,
During Standby Time Value
10. B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
5/19
2010.08 - Rev.C

5 Page





BU52012HFV arduino
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
Technical Note
Block Diagram
BU52002GUL, BU52003GUL
VDD
A1
HALL
ELEMENT
×
TIMING LOGIC
0.1µF
Adjust the bypass capacitor value as
necessary, according to voltage noise
conditions, etc.
The CMOS output terminals enable direct connection to
the PC, with no external pull-up resistor required.
B1 OUT
A2 GND
Fig.36
PIN No.
A1
A2
B1
B2
PIN NAME
VDD
GND
OUT
N.C.
FUNCTION
POWER SUPPLY
GROUND
OUTPUT
COMMENT
OPEN or Short to GND.
BU52012NVX
A1 A2
B1 B2
Surface
A2 A1
B2 B1
Reverse
HALL
ELEMENT
×
VDD
4
TIMING LOGIC
0.1µF
Adjust the bypass capacitor value as
necessary, according to voltage
noise conditions, etc.
The CMOS output terminals enable direct
connection to the PC, with no external pull-up
resistor required.
1 OUT
2
GND
PIN No.
1
2
3
4
PIN NAME
OUT
GND
N.C.
VDD
Fig.37
FUNCTION
OUTPUT
GROUND
POWER SUPPLY
COMMENT
OPEN or Short to GND.
43
12
Surface
34
21
Reverse
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
11/19
2010.08 - Rev.C

11 Page







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