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PDF DTB513ZE Data sheet ( Hoja de datos )
| Número de pieza | DTB513ZE | |
| Descripción | (DTB513ZE / DTB513ZM) Digital transistors | |
| Fabricantes | ROHM Semiconductor | |
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Transistors
DTB513ZE / DTB513ZM
-500mA / -12V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB513ZE / DTB513ZM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
zStructure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTB513ZE
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15 (1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : Y11
DTB513ZM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Abbreviated symbol : Y11
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
Collector current
∗1
VIN
IC (max)
Power dissipation ∗2
PD
Junction temperature
Tj
Storage temperature
Tstg
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Limits
DTB513ZE DTB513ZM
−12
−10 to +5
−500
150
150
−55 to +150
Unit
V
V
mA
mW
C
C
zPackaging specifications
Package
Packaging type
Code
Part No.
Basic ordering
unit (pieces)
DTB513ZE
DTB513ZM
EMT3
Taping
TL
VMT3
Taping
T2L
3000 8000
−
−
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
VI(off)
VI(on)
−
−2.5
−
−
Output voltage
VO(on) − −60
Input current
II − −
Output current
IO(off)
−
−
DC current gain
Transition frequency ∗
GI 140 −
fT − 260
Input resistance
R1 0.7 1.0
Resistance ratio
R2/R1
∗ Characteristics of built-in transistor.
8.0
10
Max.
−0.3
−
−300
−6.4
−0.5
−
−
1.3
12
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −100mA / −5mA
VI= −5V
VCC= −12V, VI=0V
VO= −2V, IO= −100mA
VCE= −10V, IE=5mA, f=100MHz
−
−
zEquivalent circuit
R1
IN
R2
OUT
GND(+)
IN OUT
GND(+)
R1=1.0kΩ / R2=10kΩ
1/1
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet DTB513ZE.PDF ] | |
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